| Budget Amount *help |
¥23,920,000 (Direct Cost: ¥18,400,000、Indirect Cost: ¥5,520,000)
Fiscal Year 2017: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2016: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2015: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2014: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
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| Outline of Final Research Achievements |
We have successfully established the process technologies to integrate active and passive waveguide photonic devices on the III-V CMOS photonics platform. Thus, we have demonstrated the carrier-injection InGaAsP optical modulator on the III-V-OI wafer. Moreover, the monolithic integration of the InGaAsP optical modulator and InGaAs MOS transistor has been successfully demonstrated, exhibiting the feasibility of the electronic-photonic integration capability of the III-V CMOS photonics platform. Through the investigation of optical modulators based on the free-carrier effect, we have invented the Si hybrid MOS optical modulator which exhibits the highest modulation efficiency among semiconductor-based optical modulators. We have also proposed the III-V on SiC platform which can dramatically improve the heat dissipation.
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