| 研究実績の概要 |
Spintronics is one of the most exciting and challenging areas in nanotechnology, important to both fundamental scientific research and industrial applications. Nowadays, microelectronic devices continue to diminish in size to achieve higher speeds. As this shrinkage occurs, design parameters are impacted in such a way that the materials in current use are pushed to their limits. To keep the rate of device shrinkage and still maintain overall performance goals, the data storage capacity will eventually reach a natural performance limit even with some technical innovations. With the limits of microelectronic miniaturization in sight there has been an enormous drive to innovate radically new materials and technologies in order to match the continued expansion of the world economy and to meet the insatiable demands of the world microprocessor market. This project therefore aims at development of novel Giant Magneto-Resistive (GMR) devices with GMR ratio exceeding by few orders of magnitudes of spintronic materials;
2D materials, such as MoS2 and WSe2 are expected to be promising as good candidates to transfer spin. Therefore,I have stuided these materials. I have successfully fabricated few-layer MoS2 transistors. Furthermore, to acquire detailed information on the device physics of these transistor, I have performed operando soft x-ray spectromicroscopy. As a result, the electronic states were found to be modulated through many-body effects.
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