CVD原子層積層による高キャリア濃度・高移動度IV族半導体人工結晶の創成

• 研究課題/領域番号: 19206032
• 研究種目: 基盤研究(A)
• 配分区分: 補助金
• 応募区分: 一般
• 研究分野: 電子・電気材料工学
• 研究機関: 東北大学
• 研究代表者: 室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)
• 研究分担者: 櫻庭 政夫 東北大学, 電気通信研究所, 准教授 (30271993)
• 研究期間 (年度): 2007 – 2009
• 研究課題ステータス: 完了 (2009年度)
• 配分額: 47,580千円 (直接経費: 36,600千円、間接経費: 10,980千円); 2009年度: 16,120千円 (直接経費: 12,400千円、間接経費: 3,720千円); 2008年度: 15,340千円 (直接経費: 11,800千円、間接経費: 3,540千円); 2007年度: 16,120千円 (直接経費: 12,400千円、間接経費: 3,720千円)
• キーワード: 化学気相成長(CVD) / IV族半導体 / 原子層積層 / 原子層ドーピング / 人工結晶

研究概要

熱窒化SiGe上へのSiGe堆積によるSiGe中へのN 原子層ドーピング、並びに、歪SiGe表面に形成したP原子層上へのSi堆積の低温化・高速化によるP原子層ドーピングの超高濃度化を実現した。また、Si上へのB原子層形成とその上へのSi堆積の低温化によるB原子層ドープSiにおける超高キャリア濃度化を実現した。さらに、歪SiGe/Siヘテロ界面へのC原子層ドーピングによる相互拡散と歪緩和の抑制、並びに、SiGeやBドープSiエピタキシャル薄膜の熱CVDにおいて、歪が表面反応・偏析・固溶限界・不純物電気的活性化に大きな影響を与えることも明らかにした。

研究成果

• [雑誌論文] Fabrication of High-Ge-Fraction Strained Si_<1-x>Ge_x/Si Hole Resonant Tunneling Diode Using Low-Temperature Si_2H_6 Reaction for Nanometer-Order Ultrathin Si Barriers (2011)
  • 著者名/発表者名: K.Takahashi、M.Sakuraba, J.Murota
  • 雑誌名: Solid-State Electron. Vol.60 ページ: 112-115
  • 査読あり
• [雑誌論文] Capture/Emission Process of Carriers in Heterointerface Traps Observed in the Transient Charge Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs (2011)
  • 著者名/発表者名: T.Tsuchiya、K.Yoshida、M.Sakuraba, J. Murota
  • 雑誌名: Key Engineering Materials Vol.470 ページ: 201-206
  • 査読あり
• [雑誌論文] Heavy Atomic-Layer Doping of Nitrogen in Si_<1-x>Ge_x Film Epitaxially Grown on Si(100) by Ultraclean Low-Pressure CVD (2010)
  • 著者名/発表者名: T.Kawashima、M.Sakuraba、B.Tillack, J.Murota
  • 雑誌名: Thin Solid Films Vol.518
  • 査読あり
• [雑誌論文] Heavy Carbon Atomic-Layer Doping at Si_<1-x>Ge_x/Si Heterointerface (2010)
  • 著者名/発表者名: T.Hirano、M.Sakuraba、B.Tillack, J.Murota
  • 雑誌名: Thin Solid Films Vol.518
  • 査読あり
• [雑誌論文] Impact of Si Cap Layer Growth on Surface Segregation of P Incorporated by Atomic Layer Doping (2010)
  • 著者名/発表者名: Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
  • 雑誌名: Thin Solid Films Vol.518
  • 査読あり
• [雑誌論文] Heavy Atomic-Layer Doping of Nitrogen in Si_<1-x>Ge_x Film Epitaxially Grown on Si(100) by Ultraclean Low-Pressure CVD (2010)
  • 著者名/発表者名: T.Kawashima
  • 雑誌名: Thin Solid Films 巻: 518
  • 査読あり
• [雑誌論文] Heavy Carbon Atomic-Layer Doping at Si_<1-x>Ge_x/Si Heterointerface (2010)
  • 著者名/発表者名: T.Hirano
  • 雑誌名: Thin Solid Films 巻: 518
  • 査読あり
• [雑誌論文] Impact of Si Cap Layer Growth on Surface Segregation of P Incorporated by Atomic Layer Donine (2010)
  • 著者名/発表者名: Y.Chiba
  • 雑誌名: Thin Solid Films 巻: 518
  • 査読あり
• [雑誌論文] Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System (2009)
  • 著者名/発表者名: H.Tanno、M.Sakuraba、B.Tillack, J.Murota
  • 雑誌名: Solid-State Electron. Vol.53 ページ: 877-879
  • 査読あり
• [雑誌論文] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2009)
  • 著者名/発表者名: T.Seo、K.Takahashi、M.Sakuraba, J.Murota
  • 雑誌名: Solid-State Electron. Vol.53 ページ: 912-915
  • 査読あり
• [雑誌論文] Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System (2009)
  • 著者名/発表者名: H.Tanno
  • 雑誌名: Solid-State Electron. 巻: 53 ページ: 877-879
  • 査読あり
• [雑誌論文] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2009)
  • 著者名/発表者名: T.Seo
  • 雑誌名: Solid-State Electron. 巻: 53 ページ: 912-915
  • 査読あり
• [雑誌論文] Behavior of N Atoms in Atomic-Order Nitrided Si_<0.5>Ge_<0.5>(100) (2008)
  • 著者名/発表者名: N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
  • 雑誌名: Appl.Surf.Sci. Vol.254、No.19 ページ: 6021-6024
  • 査読あり
• [雑誌論文] Heavy Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition (2008)
  • 著者名/発表者名: H.Tanno、M.Sakuraba、B.Tillack, J.Murota
  • 雑誌名: Appl.Surf.Sci. Vol.254、No.19 ページ: 6086-6089
  • 査読あり
• [雑誌論文] Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low-Pressure CVD System (2008)
  • 著者名/発表者名: T.Yokogawa、K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
  • 雑誌名: Appl.Surf.Sci. Vol.254、No.19 ページ: 6090-6093
  • 査読あり
• [雑誌論文] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure" (2008)
  • 著者名/発表者名: T.Seo、M.Sakuraba, J.Murota
  • 雑誌名: Appl.Surf.Sci. Vol.254、No.19 ページ: 6265-6267
  • 査読あり
• [雑誌論文] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2008)
  • 著者名/発表者名: T.Seo、M.Sakuraba, J.Murota
  • 雑誌名: Thin Solid Films Vol.517 ページ: 110-112
  • 査読あり
• [雑誌論文] Structural Change of Atomic-Order Nitride Formed on Si_<1-x>Ge_x(100) and Ge(100) by Heat Treatment (2008)
  • 著者名/発表者名: N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
  • 雑誌名: Thin Solid Films Vol.517 ページ: 219-221
  • 査読あり
• [雑誌論文] Si Epitaxial Growth on Self- Limitedly B Adsorbed Si_<1-x>Ge_x (100) by Ultraclean Low-Pressure CVD System (2008)
  • 著者名/発表者名: K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
  • 雑誌名: Thin Solid Films Vol.517 ページ: 229-231
  • 査読あり
• [雑誌論文] Local Strain in Si/Si_<0.6>Ge_<0.4>/Si(100) Heterostructures by Stripe-Shape Patterning (2008)
  • 著者名/発表者名: J.Uhm、M.Sakuraba, J.Murota
  • 雑誌名: Thin Solid Films Vol.517 ページ: 300-302
• [雑誌論文] High Ge Fraction Intrinsic SiGe-Heterochannel MOSFETs with Embedded SiGe Source/Drain Electrode Formed by In-Situ Doped Selective CVD Epitaxial Growth (2008)
  • 著者名/発表者名: S.Takehiro、M.Sakuraba、T.Tsuchiya, J.Murota
  • 雑誌名: Thin Solid Films Vol.517 ページ: 346-349
  • 査読あり
• [雑誌論文] High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGe CVD (2008)
  • 著者名/発表者名: S. Takehiro
  • 雑誌名: Electr. Eng. Jpn 165 ページ: 46-50
  • 査読あり
• [雑誌論文] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2008)
  • 著者名/発表者名: T. Seo
  • 雑誌名: Thin Solid Films 517 ページ: 110-112
  • 査読あり
• [雑誌論文] Structural Change of Atomic-Order Nitride Formed on Si_<1-x>Ge_x(100) and Ge(100) by Heat Treatment (2008)
  • 著者名/発表者名: N. Akiyama
  • 雑誌名: Thin Solid Films 517 ページ: 219-221
  • 査読あり
• [雑誌論文] Si Epitaxial Growth on Self-Limitedly B Adsorbed Si1-xGex(100) by Ultraclean Low-Pressure CVD System (2008)
  • 著者名/発表者名: K. Ishibashi
  • 雑誌名: Thin Solid Films 517 ページ: 229-231
  • 査読あり
• [雑誌論文] Local Strain in Si/Si_<0.6>Ge_<0.4>/Si(100) Heterostructures by Stripe-Shape Patterning (2008)
  • 著者名/発表者名: J. Uhm
  • 雑誌名: Thin Solid Films 517 ページ: 300-302
  • 査読あり
• [雑誌論文] High Ge Fraction Intrinsic SiGe-Heterochannel MOSFETs with Embedded SiGe Source/Drain Electrode Formed by In-Situ Doped Selective CVD Epitaxial Growth (2008)
  • 著者名/発表者名: S. Takehiro
  • 雑誌名: Thin Solid Films 517 ページ: 346-349
  • 査読あり
• [雑誌論文] Behavior of N Atoms in Atomic-Order Nitrided Si_<0.5>Ge_<0.5>(100) (2008)
  • 著者名/発表者名: N. Akiyama
  • 雑誌名: Appl. Surf. Sci. 254(in press)
  • 査読あり
• [雑誌論文] Heavy Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100)by Ultraclean Low-Pressure Chemical Vapor Deposition (2008)
  • 著者名/発表者名: H. Tanno
  • 雑誌名: Appl. Surf. Sci. 254(in press)
  • 査読あり
• [雑誌論文] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction(x>0.4)Si/Strained Si_<1-x>Ge_x/Si(100)Heterostructure (2008)
  • 著者名/発表者名: T. Seo
  • 雑誌名: Appl. Surf. Sci. 254(in press)
  • 査読あり
• [雑誌論文] Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100)by Ultraclean Low-Pressure CVD System (2008)
  • 著者名/発表者名: T. Yokogawa
  • 雑誌名: Appl. Surf. Sci. 254(in press)
  • 査読あり
• [雑誌論文] Hot Carrier Degradation of SiGe/Si Heterointerface and Experimental Estimation of Density of Locally Generated Heterointerface Traps (2007)
  • 著者名/発表者名: T.Tsuchiya、S.Mishima、M.Sakuraba, J.Murota
  • 雑誌名: Jpn.J.Appl.Phys. Vol.46、No.8A ページ: 5015-5020
  • NAID: 40015538121
  • 査読あり
• [雑誌論文] Strain Control of Si and Si_<1-x>Ge_x Layers in the Si/Si_<1-x>Ge_x/Si Heterostructures by Stripe-Shape Patterning for Future Si-Based Devices (2007)
  • 著者名/発表者名: J.Murota、J.Uhm, M.Sakuraba
  • 雑誌名: ECS Trans. Vol.11、No.6 ページ: 91-99
  • 査読あり
• [雑誌論文] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100) (2007)
  • 著者名/発表者名: M.Sakuraba、R.Ito、T.Seo, J.Murota
  • 雑誌名: ECS Trans. Vol.11、No.6 ページ: 131-139
  • 査読あり
• [雑誌論文] Hot Carrier Degradation of Site/Si Heterointerface and Experimental Estimation of Density of Locally Generated Heterointerface Traps (2007)
  • 著者名/発表者名: T. Tsuchiya
  • 雑誌名: Jpn. J. Appl. Phys. 46 ページ: 5015-5020
  • 査読あり
• [雑誌論文] Strain Control of Si and Si_<1-x>Ge_x Layers in the Si/Si_<1-x>Ge_x/Si Heterostructures by Stripe-Shape Patterning for Future Si-Based Devices(Invited Paper) (2007)
  • 著者名/発表者名: J. Murota
  • 雑誌名: ECS Trans. 11 ページ: 91-99
  • 査読あり
• [雑誌論文] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100)(Invited Paper) (2007)
  • 著者名/発表者名: M. Sakuraba
  • 雑誌名: ECS Trans. 11 ページ: 131-139
  • 査読あり
• [学会発表] Adsorption and Desorption of Hydrogen on Si(100) in H_2 or Ar Heat Treatment (2010)
  • 著者名/発表者名: A.Uto、M.Sakuraba、M.Caymax, J.Murota
  • 学会等名: 5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai、Japan
• [学会発表] Heavy P Atomic-Layer Doping between Si and Si_<0.3>Ge_<0.7>(100) by Ultraclean Low Pressure CVD (2010)
  • 著者名/発表者名: Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
  • 学会等名: 5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai、Japan
• [学会発表] Effect of Heavy Carbon Atomic-Layer Doping upon Intermixing and Strain at Si_<1-x>Ge_x/Si(100) Heterointerface (2010)
  • 著者名/発表者名: T.Hirano、M.Sakuraba、B.Tillack, J.Murota
  • 学会等名: 5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai、Japan
• [学会発表] N Atomic-Layer Doping in Si/Si_<1-x>Ge_x/Si(100) Heterostructure Growth by Low-Pressure CVD (2010)
  • 著者名/発表者名: T.Kawashima、M.Sakuraba、B.Tillack, J.Murota
  • 学会等名: 5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai、Japan
• [学会発表] Evolution of the Hydrogen Terminated Structure of the Si(100) Surface and Its Interaction with H_2 at 20-800℃ (2010)
  • 著者名/発表者名: A.Uto、M.Sakuraba、M.Caymax, J.Murota
  • 学会等名: 5th Int.SiGe Technology and Device Meeting (ISTDM2010)
  • 発表場所: Stockholm、Sweden
• [学会発表] In-Situ Heavy B-Doped Si Epitaxial Growth on Tensile-Strained Si(100) by Ultraclean Low-Pressure CVD Using SiH_4 and B_2H_6 (2010)
  • 著者名/発表者名: M.Nagato、M.Sakuraba、J.Murota、B.Tillack、Y.Inokuchi、Y.Kunii, H.Kurokawa
  • 学会等名: 5th Int.SiGe Technology and Device Meeting(ISTDM2010)
  • 発表場所: Stockholm、Sweden
• [学会発表] Influence of Strain on P Atomic-Layer Doping Characteristics in Strained Si_<0.3>Ge_<0.7>/Si(100) Heterostructures (2010)
  • 著者名/発表者名: Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
  • 学会等名: 5th Int.SiGe Technology and Device Meeting (ISTDM2010)
  • 発表場所: Stockholm、Sweden
• [学会発表] Atomically Controlled Processing in Strained Si-Based CVD Epitaxial Growth (2010)
  • 著者名/発表者名: J.Murota、M.Sakuraba, B.Tillack
  • 学会等名: 10th IEEE Int.Conf.on Solid-State and Integrated Circuit Technology (ICSICT-2010)
  • 発表場所: Shanghai、China(Invited Paper)
• [学会発表] Adsorption and Desorption of Hydrogen on Si(100) in H_2, or Ar Heat Treatment (2010)
  • 著者名/発表者名: A.Uto
  • 学会等名: 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Heavy P Atomic-Layer Doping between Si and Si_<0.3>Ge_<0.7>(100) by Ultraclean Low Pressure CVD (2010)
  • 著者名/発表者名: Y.Chiba
  • 学会等名: 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Effect of Heavy Carbon Atomic-Layer Doping upon Intermixing and Strain at Si_<1-x>Ge_x/Si(100) Heterointerface (2010)
  • 著者名/発表者名: T.Hirano
  • 学会等名: 5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] N Atomic-Layer Doping in Si/Si_<1-x>Ge_x/Si(100) Heterostructure Growth by Low-Pressure CVD (2010)
  • 著者名/発表者名: T.Kawashima
  • 学会等名: 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Evolution of the Hydrogen Terminated Structure of the Si(100) Surface and Its Interaction with H_2 at 20-800℃ (2010)
  • 著者名/発表者名: A.Uto
  • 学会等名: 5th Int.SiGe Technology and Device Meeting (ISTDM2010)
  • 発表場所: Stockholm, Sweden
• [学会発表] In-Situ Heavy B-Doped Si Epitaxial Growth on Tensile-Strained Si(100)by Ultraclean Low-Pressure CVD Using SiH_4 and B_2H_6 (2010)
  • 著者名/発表者名: M.Nagato
  • 学会等名: 5th Int.SiGe Technology and Device Meeting (ISTDM2010)
  • 発表場所: Stockholm, Sweden
• [学会発表] Influence of Strain on P Atomic-Layer Doping Characteristics in Strained Si_<0.3>Ge_<0.7>/Si(100) Heterostructures (2010)
  • 著者名/発表者名: Y.Chiba
  • 学会等名: 5th Int. SiGe Technology and Device Meeting (ISTDM2010)
  • 発表場所: Stockholm, Sweden
• [学会発表] Atomically Controlled Processing in Strained Si-Based CVD Epitaxial Growth" (Invited Paper) (2010)
  • 著者名/発表者名: J.Murota
  • 学会等名: 10th IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT-2010)
  • 発表場所: Shanghai, China
• [学会発表] Atomically controlled processing in strained Si-based CVD epitaxial growth" (Invited Paper) (2010)
  • 著者名/発表者名: J.Murota
  • 学会等名: 3rd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2010)
  • 発表場所: Albi, France
• [学会発表] Heavy Nitrogen Atomic-Layer Doping of Si_<1-x>Ge_x Epitaxially Grown on Si(100) by Ultraclean Low-Pressure CVD (2009)
  • 著者名/発表者名: T.Kawashima、M.Sakuraba、B.Tillack, J.Murota
  • 学会等名: 6th Int.Conf.on Silicon Epitaxy andHeterostructures (ICSI-6)
  • 発表場所: Los Angeles、USA
• [学会発表] Heavy Carbon Atomic-Layer Doping at Si_<1-x>Ge_x/Si Heterointerface (2009)
  • 著者名/発表者名: T.Hirano、M.Sakuraba、B.Tillack, J.Murota
  • 学会等名: 6th Int.Conf.on Silicon Epitaxy and Heterostructures (ICSI-6)
  • 発表場所: Los Angeles、USA
• [学会発表] Impact of Si Cap Layer Growth on Surface Segregation of P Incorporated by Atomic-Layer Doping of Strained Si_<1-x>Ge_x (2009)
  • 著者名/発表者名: Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
  • 学会等名: 6th Int.Conf.on Silicon Epitaxy and Heterostructures (ICSI-6)
  • 発表場所: Los Angeles、USA
• [学会発表] Atomically Controlled Processing for Group-IV Semiconductors (2009)
  • 著者名/発表者名: J.Murota, M.Sakuraba
  • 学会等名: 2009 Int.Conf.on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs.TFT)
  • 発表場所: Xi'an、China(Invited Paper)
• [学会発表] Atomically Controlled CVD Processing for Doping of Si-Based Group IV Semiconductors (2009)
  • 著者名/発表者名: J.Murota、M.Sakuraba, B.Tillack
  • 学会等名: Symp. E10 : ULSI Process Integration 6 (216th Meeting of the Electrochem.Soc.)
  • 発表場所: Vienna、Austria(Invited Paper)
• [学会発表] Heavy Nitrogen Atomic-Layer Doping of Si<1-x>Ge_x Epitaxially Grown on Si(100) by Ultraclean Low-Pressure CVD (2009)
  • 著者名/発表者名: T.Kawashima
  • 学会等名: 6th Int.Conf. on Silicon Epitaxy and Heterostructures
  • 発表場所: Los Angeles, USA
• [学会発表] Heavy Carbon Atomic-Layer Doping at Si,_<1-x>Ge_<x>/Si Heterointerface (2009)
  • 著者名/発表者名: T.Hirano
  • 学会等名: 6th Int.Conf. on Silicon Epitaxy and Heterostructures
  • 発表場所: Los Angeles, USA
• [学会発表] Impact of Si Cap Layer Growth on Surface Segregation of P Incorporated by Atomic-Layer Doping of Strained Si_<1-x>Ge_x (2009)
  • 著者名/発表者名: Y.Chiba
  • 学会等名: 6th Int.Conf. on Silicon Epitaxy and Heterostructures
  • 発表場所: Los Angeles, USA
• [学会発表] Atomically Controlled Processing for Group-IV Semiconductors (Invited Paper) (2009)
  • 著者名/発表者名: J.Murota
  • 学会等名: 2009 Int.Conf.on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
  • 発表場所: Xi'an, China
• [学会発表] Atomically Controlled CVD Processing for Doping of Si-Based Group IV Semiconductors (Invited Paper) (2009)
  • 著者名/発表者名: J.Murota
  • 学会等名: Symp.E10 : ULSI Process Integration 6(216th Meeting of the Electrochem. Soc.)
  • 発表場所: Vienna, Austria
• [学会発表] Atomically Controlled Processing for Future Si-Based Devices (Invited Paper) (2009)
  • 著者名/発表者名: J.Murota
  • 学会等名: 2nd French Research Organizations-Tohoku University Joint Workshon on Frontier Materials
  • 発表場所: Sendai, Japan
• [学会発表] Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System (2008)
  • 著者名/発表者名: H.Tanno、M.Sakuraba、B.Tillack, J.Murota
  • 学会等名: 4th Int.SiGe Technology and Device Meeting (ISTDM2008)
  • 発表場所: Hsinchu、Taiwan
• [学会発表] Change of H-Termination on Wet-Cleaned Si(100) and Ge(100) by Heat-Treatment in H_2 or Ar (2008)
  • 著者名/発表者名: A.Uto、M.Sakuraba、M.Caymax, J.Murota
  • 学会等名: 4th Int.SiGe Technology and Device Meeting (ISTDM2008)
  • 発表場所: Hsinchu、Taiwan
• [学会発表] Atomically Controlled Processing for Impurity Doping in Si-Based CVD Epitaxial Growth (2008)
  • 著者名/発表者名: J.Murota、M.Sakuraba, B.Tillack
  • 学会等名: 8th Int.Conf.on Atomic Layer Deposition (ALD 2008)
  • 発表場所: Bruges、Belgium(Invited Paper)
• [学会発表] Atomically Controlled CVD Processing for Future Si-Based Devices (2008)
  • 著者名/発表者名: J.Murota、M.Sakuraba, B.Tillack
  • 学会等名: 9th Int.Conf.on Solid-State and Integrated-Circuit Technol. (ICSICT 2008)
  • 発表場所: Beijing、China(Invited Paper)
• [学会発表] Atomically Controlled Processing in Si-Based CVD Epitaxial Growth (2008)
  • 著者名/発表者名: J.Murota、M.Sakuraba, B.Tillack
  • 学会等名: Symp. Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices"、Int.Union of Materials Research Society-Int.Conf.in Asia 2008 (IUMRS-ICA 2008)
  • 発表場所: Nagoya、Japan(Invited Paper)
• [学会発表] Nitrogen Atomic-Layer Doping in Nanometer-Order Heterostructure of Si/Si_<1-x>Ge_x/Si(100) by Ultraclean Low-Pressure CVD (2008)
  • 著者名/発表者名: T.Kawashima、M.Sakuraba, J.Murota
  • 学会等名: Symp.Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices、Int.Union of Mat.Res.Soc.-Int.Conf.in Asia 2008 (IUMRS-ICA2008)
  • 発表場所: Nagoya、Japan
• [学会発表] Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System (2008)
  • 著者名/発表者名: H. Tanno
  • 学会等名: 4th Int. SiGe Technology and Device Meeting (ISTDM2008)
  • 発表場所: Hsinchu, Taiwan
• [学会発表] Change of H-Termination on Wet-Cleaned Si(100) and Ge(100) by Heat-Treatment in H2 or Ar (2008)
  • 著者名/発表者名: A. Uto
  • 学会等名: 4th Int. SiGe Technology and Device Meeting (ISTDM2008)
  • 発表場所: Hsinchu, Taiwan
• [学会発表] Atomically Controlled Processing for Impurity Doping in Si-Based CVD Epitaxial Growth (Invited Paper) (2008)
  • 著者名/発表者名: J. Murota
  • 学会等名: 8th Int. Conf. on Atomic Layer Deposition (ALD 2008)
  • 発表場所: Bruges, Belgium
• [学会発表] P Atomic-Layer Doping in Heteroepitaxial Growth of Si on Strained Si1-xGex/Si(100) by Ultraclean-Low-Pressure CVD (2008)
  • 著者名/発表者名: Y. Chiba
  • 学会等名: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Formation of Nitrogen Atomic-Layer Doped Si/Si1-xGex/Si(100) Epitaxially Grown by Ultraclean Low-Pressure CVD (2008)
  • 著者名/発表者名: T. Kawashima
  • 学会等名: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Heat-Treatment Effect upon H-Terminated Structure Formed on Wet-Cleaned Si(100) and Ge(100) (2008)
  • 著者名/発表者名: A. Uto
  • 学会等名: 4th Int. Workshop on New Group IV Semiconductor Nannelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Atomically Controlled CVD Processing for Future Si-Based Devices (Invited Paper) (2008)
  • 著者名/発表者名: J. Murota
  • 学会等名: 9th Int. Conf. on Solid-State and Integrated-Circuit Technol. (ICSICT 2008)
  • 発表場所: Beijing, China
• [学会発表] Atomically Controlled Processing in Si-Based CVD Epitaxial Growth (Invited Paper) (2008)
  • 著者名/発表者名: J. Murota
  • 学会等名: Int. Union of Mat. Res. Soc. -Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
  • 発表場所: Nagoya, Japan
• [学会発表] Nitrogen Atomic-Layer Doping in Nanometer-Order Heterostructure of Si/Si_<1-x>Ge_x/Si(100) by Ultraclean Low-Pressure CVD (2008)
  • 著者名/発表者名: T. Kawashima
  • 学会等名: Int. Union of Mat. Res. Soc. -Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
  • 発表場所: Nagoya, Japan
• [学会発表] Atomically Controlled Technology for Group IV Semiconductors (2007)
  • 著者名/発表者名: J.Murota、M.Sakuraba, B.Tillack
  • 学会等名: 4th Int.Workshop on Nanoscale Semiconductor Devices
  • 発表場所: Jeju、Korea(Invited Paper)
• [学会発表] Reliability and Instability of a SiGe/Si-Hetero-Interface In Hetero-Channel MOSFETs (2007)
  • 著者名/発表者名: T.Tsuchiya、M.Sakuraba, J.Murota
  • 学会等名: 5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
  • 発表場所: Marseille、France(Invited Paper)
• [学会発表] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2007)
  • 著者名/発表者名: T.Seo、M.Sakuraba, J.Murota
  • 学会等名: 5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
  • 発表場所: Marseille、France
• [学会発表] Structural Change of Atomic-Order Nitride Formed on Si_<1-x>Ge_x(100) and Ge(100) by Heat Treatment (2007)
  • 著者名/発表者名: N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
  • 学会等名: 5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
  • 発表場所: Marseille、France
• [学会発表] Si Epitaxial Growth on Self-Limitedly B Adsorbed Si_<1-x>Ge_x(100) by Ultraclean Low-Pressure CVD System (2007)
  • 著者名/発表者名: K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
  • 学会等名: 5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
  • 発表場所: Marseille、France
• [学会発表] Local Strain in Si/Si_<0.6>Ge_<0.4>/Si(100) Heterostructures by Stripe-Shape Patterning (2007)
  • 著者名/発表者名: J.Uhm、M.Sakuraba, J.Murota
  • 学会等名: 5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
  • 発表場所: Marseille、France
• [学会発表] High Ge Fraction Intrinsic SiGe-Heterochannel MOSFETs with Embedded SiGe Source/Drain Electrode Formed by In-Situ Doped Selective CVD Epitaxial Growth (2007)
  • 著者名/発表者名: S.Takehiro、M.Sakuraba、T.Tsuchiya, J.Murota
  • 学会等名: 5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
  • 発表場所: Marseille、France
• [学会発表] Behavior of N Atoms on Atomic-Order Nitrided Si_<0.5>Ge_<0.5>(100) (2007)
  • 著者名/発表者名: N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
  • 学会等名: 5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
  • 発表場所: Hachioji、Japan
• [学会発表] Heavily Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition (2007)
  • 著者名/発表者名: H.Tanno、M.Sakuraba、B.Tillack, J.Murota
  • 学会等名: 5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
  • 発表場所: Hachioji、Japan
• [学会発表] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2007)
  • 著者名/発表者名: T.Seo、M.Sakuraba, J.Murota
  • 学会等名: 5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
  • 発表場所: Hachioji、Japan
• [学会発表] Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low- Pressure CVD System (2007)
  • 著者名/発表者名: T.Yokogawa、K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
  • 学会等名: 5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
  • 発表場所: Hachioji、Japan
• [学会発表] Atomically Controlled Technology for Group IV Semiconductors(Invited Paper) (2007)
  • 著者名/発表者名: J. Murota
  • 学会等名: 4th Int. Workshop on Nanoscale Semiconductor Devices
  • 発表場所: Jeju,Korea
• [学会発表] Reliability and Instability of a SiGe/Si-Hetero-Interface in Hetero-Channel MOSFETs(Invited Paper) (2007)
  • 著者名/発表者名: T. Tsuchiya
  • 学会等名: 5th Int. Conf. Silicon Epitaxy and Heterostructures(ICSI-5)
  • 発表場所: Marseille, France
• [学会発表] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si<1-x>Ge_x/Si(100)Heterostructure (2007)
  • 著者名/発表者名: T. Seo
  • 学会等名: 5th Int. Conf. Silicon Epitaxy and Heterostructures(ICSI-5)
  • 発表場所: Marseille, France
• [学会発表] Structural Change of Atomic-Order Nitride Formed on Si_<1-x>Ge_x(100)and Ge(100)by Heat Treatment (2007)
  • 著者名/発表者名: N. Akiyama
  • 学会等名: 5th Int. Conf. Silicon Epitaxy and Heterostructures(ICSI-5)
  • 発表場所: Marseille, France
• [学会発表] Si Epitaxial Growth on Self-Limitedly B Adsorbed Si_<1-x>Ge_x(100)by Ultraclean Low-Pressure CVD System (2007)
  • 著者名/発表者名: K. Ishibashi
  • 学会等名: 5th Int. Conf. Silicon Epitaxy and Heterostructures(ICSI-5)
  • 発表場所: Marseille, France
• [学会発表] Local Strain in Si/Si_<0.6>Ge_<0.4>/Si(100)Heterostructures by Stripe-Shape Patterning (2007)
  • 著者名/発表者名: J. Uhm
  • 学会等名: 5th Int. Conf. Silicon Epitaxy and Heterostructures(ICSI-5)
  • 発表場所: Marseille, France
• [学会発表] High Ge Fraction Intrinsic SiGe-Heterochannel MOSFETs with Embedded SiGe Source/Drain Electrode Formed by In-Situ Doped Selective CVD Epitaxial Growth (2007)
  • 著者名/発表者名: S. Takehiro
  • 学会等名: 5th Int. Conf. Silicon Epitaxy and Heterostructures(ICSI-5)
  • 発表場所: Marseille, France
• [学会発表] Strain Control of Si and Si_<1-x>Ge_x Layers in the Si/Si_<1-x>Ge_x/Si Heterostructures by Stripe-Shape Patterning for Future Si-Based Devices(Invited Paper) (2007)
  • 著者名/発表者名: J. Murota
  • 学会等名: Symp. E9: ULSI Process Integration5(212th Meeting of the Electrochem. Soc.)
  • 発表場所: Washington, DC, USA
• [学会発表] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100)(Invited Paper) (2007)
  • 著者名/発表者名: M. Sakuraba
  • 学会等名: Symp. E9: ULSI Process Integration5(212th Meeting of the Electrochem. Soc.)
  • 発表場所: Washington, DC, USA
• [学会発表] Instability of a SiGe/Si-hetereo-interface in hetero-channel MOSFETs due to Joule heating(Invited Paper) (2007)
  • 著者名/発表者名: T. Tsuchiya
  • 学会等名: 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Characterization of B Incorporation in B Atomic Layer Doping at Si/Ge(100)Heterointerface (2007)
  • 著者名/発表者名: T. Yokogawa
  • 学会等名: 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Heat-Treatment Effect on Structure of Atomic-Order Nitrided Si_<0.5>Ge_<0.5>(100)Using Low Pressure CVD (2007)
  • 著者名/発表者名: N. Akiyama
  • 学会等名: 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Effect of Low-Temperature SiH_4 Exposure on Heavily Atomic-Layer Doping of B in Si Epitaxial Growth on Si(100)by Ultraclean Low-Pressure CVD (2007)
  • 著者名/発表者名: H. Tanno
  • 学会等名: 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction(x>0.4)Si/Strained Si_<1-x>Ge_x/Si(100)Heterostructure (2007)
  • 著者名/発表者名: T. Seo
  • 学会等名: 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • 発表場所: Sendai, Japan
• [学会発表] Behavior of N Atoms on Atomic-Order Nitrided Si_<0.5>Ge_<0.5>(100) (2007)
  • 著者名/発表者名: N. Akiyama
  • 学会等名: 5th Int. Symp. Control of Semiconductor Interfaces(ISCSI-V)
  • 発表場所: Hachioji, Japan
• [学会発表] Heavily Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100)by Ultraclean Low-Pressure Chemical Vapor Deposition (2007)
  • 著者名/発表者名: H. Tanno
  • 学会等名: 5th Int. Symp. Control of Semiconductor Interfaces(ISCSI-V)
  • 発表場所: Hachioji, Japan
• [学会発表] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction(x>0.4)Si/Strained Si_<1-x>Ge_<x>/Si(100)Heterostructure (2007)
  • 著者名/発表者名: T. Seo
  • 学会等名: 5th Int. Symp. Control of Semiconductor Interfaces(ISCSI-V)
  • 発表場所: Hachioji, Japan
• [学会発表] Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100)by Ultraclean Low-Pressure CVD System (2007)
  • 著者名/発表者名: T. Yokogawa
  • 学会等名: 5th Int. Symp. Control of Semiconductor Interfaces(ISCSI-V)
  • 発表場所: Hachioji, Japan