| 研究概要 |
We have developed a process for fabricating micron-scale fully epitaxial top-gate oxide field-effect transistors that use an oxide channel, oxide source and drain electrodes and a wide-gap oxide gate insulator. We have studied charge accumulation at CaHfO_3/SrTiO_3, DyScO_3/SrTiO_3, and SrTiO_3/LaTiO_3 interfaces. As a way to confine carriers in a narrower layer at an interface, we are developing Ruddlesden-Popper-type two-dimensionalquantum wells
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