2002 Fiscal Year Final Research Report Summary
Development of InGaAs QWR-VCSELs
| Project/Area Number |
12355015
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
HIYAMIAZU Satoshi Graduate School of Engineering Science, Osaka University, Professor, 基礎工学研究科, 教授 (50201728)
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| Co-Investigator(Kenkyū-buntansha) |
ISHIKAWA Hiroshi Fujitsu Laboratories LTD., Opto-Electronics Research Division, Research Fellow, 基盤研究所, 主任研究員
KITADA Takahiro Graduate School of Engineering Science, Osaka University, Research Associate, 基礎工学研究科, 助手 (90283738)
SHIMOMURA Satoshi Graduate School of Engineering Science, Osaka University, Associate Professor, 基礎工学研究科, 助教授 (30201560)
OHTSUBO Koji Fujitsu Laboratories LTD., Opto-Electronics Research Division, Researcher, 基盤研究所, 研究員
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| Project Period (FY) |
2000 – 2002
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| Keywords | InGaAs / High-index GaAs substrates / Self-organized quantum wire / MBE growth / QWR-VCSELs |
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| Research Abstract |
InGaAs quantum wire vertical cavity surface emitting lasers (QWR-VCSELs) with emitting wavelength of 0.85-μm have been developed. High-density and highly uniform self-organized InGaAs QWRs grown on (775)B GaAs substrates by molecular beam epitaxy (MBE) was used for an active region in the QWR-VCSELs. Polarization instability problem of VCSELs was resolved by the highly polarized photon emission from the QWRs of the (775)B InGaAs QWR-VCSELs.
InGaAs/GaAs heterostructures were grown on (nnl)A- and (nnl)B-oriented GaAs substrates by MBE in order to improve self-organized InGaAs QWR structures. It was found that highly uniform and high optical quality InGaAs QWRs can be formed on (221)A GaAs substrates. Full width at half maximum (FWHM) value of a photoluminescence (PL) peak at 12 K was only 5.8 meV, that is the smallest value reported for self-organized QWRs. The (221)A InGaAs QWR lasers oscillated at room temperature. The (775)B InGaAs QWR lasers also oscillated at room temperature with threshold current densities of 1.7-3.1 kA/cm^2 and lasing wavelengths of 830-860 nm. Furthermore, stacking of the (775)B InGaAs QWRs with the use of thin AlAs barrier layers was found to enhance the one-dimensionality and carrier confinement of the QWRs. The (775)B InGaAs stacked QWR lasers showed high characteristic temperature (T_0 = 243 K) in the temperature range of 20-80℃. InGaAs QWR-VCSEL structures were grown on the (775)B GaAs substrates. Distributed Bragg reflectors (DBRs) and λ-cavity were formed successfully on the (775)B GaAs substrates, quite similar to the case of conventional (100) GaAs substrates. The (775)B InGaAs QWR-VCSEL showed room temperature lasing action by optical pumping. The polarization direction of the light output from the (775)B QWR-VCSEL was parallel to the QWR direction, and the (775)B InGaAs QWR-VCSELs exhibited highly stable single polarization-mode operation.
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