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2003 Fiscal Year Final Research Report Summary

Basic Research on Silicon Quantum Computation Based on Isotope Control and Neutron Irradiation

Research Project

Project/Area Number 13305025
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionKeio University

Principal Investigator

MATSUMOTO Satoru  Keio University, Faculty of Science and Technology, Professor, 理工学部, 教授 (00101999)

Co-Investigator(Kenkyū-buntansha) ETO Mikio  Keio University, Faculty of Science and Technology, Assistant Professor, 理工学部, 助教授 (00221812)
KURODA Tadahiro  Keio University, Faculty of Science and Technology, Professor, 理工学部, 教授 (50327681)
KUWANO Hiroshi  Keio University, Faculty of Science and Technology, Professor, 理工学部, 教授 (10051525)
Project Period (FY) 2001 – 2003
Keywordsquntum computating / silicon / spin-free silicon / isotope control / ^<31>P nuclear spin / nuclear magnetic resonance / atomic layer doping / quantum dynamics
Research Abstract

In Si-based quantum computer, ^<31>P should be distributed in an array at a distance of about 20 nm in spin-free silicon (spin zero ^<28>Si or ^<30>Si) as a qubit. In the present work, in order to fabricate its basic device structure, we aim to perform the experiments on the epitaxial growth of isotopically controlled silicon layers and the transformation of ^<30>Si to ^<31>P by neutron irradiation. This method for distributing ^<31>P in Si is superior to the ion-implantation technique, which is inherently random to the depth. For this purpose, first, epitaxial growth technique of almost 100% ^<30>Si was developed by the gas source MBE method using enriched ^<30>SiH_4, which was purchased from Kurchatov laboratory, Russia. Thus this spin-free Si epitaxial layer can be available to the base for Si-based quantum computer. Using this technique, we succeeded to fabricate the natural Si/^<30>Si/natural Si (^<28>Si:^<29>Si:^<30>Si=92.2:4.7:3.1) isotope double hetero-structures by supplying alternately normal SiH_4 and enriched ^<30>SiH_4. Then, neutron irradiation was carried out to transform ^<30>Si to ^<31>P at Japan Atomic Energy Research Institute with thermal neutron flux of 1×10^<14> cm^<-2> s^<-1> for 16 h. By the precise secondary ion mass spectroscopy (CAMECA-SIMS) measurement, the formation of ^<31>P from ^<30>Si was confirmed. Its concentration was to be about 5×10^<16> cm^<-3>w, which was almost equal to the theoretically predicted value. If the neutron irradiation is performed to the ^<29>Si/^<30>Si/^<29>Si double hetero-structures, nuclear spin ^<31>P will be distributed in a spin-free silicon (^<31>Si ), which will be used as a basic structure of Si-based quantum computer.

  • Research Products

    (35 results)

All Other

All Publications (35 results)

  • [Publications] Y.Nakabayashi: "Self-diffusion in Extrinsic Silicon Using Isotopically Enriched ^<30>Si"Jpn.J.Appl.Phys. 40. L181-L182 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Yanagawa: "Initial Growth of titanium germanosilicide on Ge/Si(111)"Appl.Surf.Sci.. 175-176. 90-95 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Mori: "Formation of Ge quantum dots on boron-reconstructed surface /Si(111)"Materials Science and Engineering. B89. 188-190 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.I.Osman: "Effect of Vacancy double acceptor level on Si self diffusion under heavy doping condition"Electrochemical Society Proc. 2002-2. 248-253 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Nishimura: "Variation of silicon melt velocity with boron addition"Journal of Crystal growth. 237-239. 1667-1670 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Nakabayashi: "Fractional Contribution in Si Self-Diffusion : Dopant Concentration and temperature Dependence."Electrochemical Society Proc.. 2002-2. 241-247 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Fujiwara: "Effect Nitrogen segregation on TED and loss of phosphorus in CZ-Si"Nuclear Instruments and Methods in Physics Research. B186. 313-317 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Nakabayashi: "Type and charge states of point defects in heavily As-and B-doped silicon"Material Science in Semiconductor Processing. 6. 15-19 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Nakabayashi: "Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure ^<30>Si/Natural Silicon Heterostructures"Jpn.J.Appl.Phys.. 42. 3304-3310 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Eto: "Multiparameter scaling of the kondo effect in quantum dots with an even number of electrons"Phys.Rev.. B66. 153319 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Hada: "Electronic states in silicon quantum dots multi vally artifical atoms"Phys.Rev.. B68. 155322 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Eto: "Current-Induced Entanglement of Nuclear Spins in Quantum Dots"J.Phys.Soc.Jpn. 73. 307-310 (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Seto: "Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon"Jpn.J.Appl.Phys.. 40. 2150-2154 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Jeong: "Effects of various Hydrogenation Processes on Bias-stress-Induced Degradation in in P-channel Poly TFT"Jpn.J.Appl.Phys.. 41. 5046-5064 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yokoyama: "Solid-Phase Crystallization Behavior of in-situ Phosphorus-Doped Amorphous Silicon Films"J.Appl.Phys.. 94. 770-773 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Matsumoto: "Diffusion in Si"Encyclopedia of Materials : Science and Technology. (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 江藤 幹雄: "量子ドットにおける核スピンのエンタングルメント機構"固体物理. 38. 725-732 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 松本 智: "半導体デバイスの基礎"培風館. 236 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Nakabayashi, T.Segawa, O.Hirman, S.Matsumoto, J.Murota, K.Wada, T.Abe: "Self-diffusion in Extrinsic Silicon Using Isotopically Enriched ^<30>Si"Jpn.J.Appl.Phys.. Vol.40. L181-L182 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Yanagawa, H.Nagai, K.Ishii, S.Matsumoto: "Initial Growth of titanium germanosilicide on Ge/Si(111)"Appl.Surf.Sci.. Vol.175-176. 90-95 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Mori, H.Nagai, T.Yanagawa, S.Matsumoto: "Formation of Ge quantum dots on boron-reconstructed surface/ Si(111)"Materials Science and Engineering. Vol.B89. 188-190 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.I.Osman, Y.Nakabayashi, T.Sakaguchi, S.Matsumoto, J.Murota, K.Wada, T.Abe: "Effect of Vacancy double acceptor level on Si self-diffusion under heavy doping condition"Electrochemical Society Proc.. Vol.2002-2. 248-253 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Nishimura, S.Matsumoto, K.Terashima: "Variation of silicon melt viscosity with boron addition"Journal of Crystal Growth. Vol.237-239. 1667-1670 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Nakabayashi, Hirman Osman, K.Toyonaga, S.Matsumoto, J.Murota, K.Wada, T.Abe: "Fractional Contribution in Si Self-Diffusion Dopant Concentration and temperature Dependence on Si Self-Diffusion mechanism"Electrochemical Society Proc.. Vol.2002-2. 241-247 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Fijiwara, K.Saito, Y.Nakabayashi, H.I.Osman, S.Matsumoto, Y.Sato: "Effect of Nitrogen segregation on TED and loss of phosphorus in CZ-Si"Nuclear Instruments and Methods in Physics Research. Vol.B186. 313-317 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Nakabayashi, H.I.Osman, K.Yokota, K.Toyonaga, S.Matsumoto, J.Murota, K.Wada, T.Abe: "Type and charge states of point defects in heavily As-and B-doped silicon"Materials Science in Semiconductor Processing. Vol.6. 15-19 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Nakabayashi, H.I.Osman, K.Yokota, K.Toyonaga, S.Matsumoto, J.Murota, K.Wada, T.Abe: "Self-diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure ^<30>Silicon/Natural Silicon Heterostructures"Jpn.J.Appl.Phys.. Vol.42. 3304-3310 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Eto, Y.Nazarov: "Multiparameter scaling of the Kondo effect in quantum dots with an even number of electrons"Phys.Rev.. Vol.B66. 153319 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Hada, M.Eto: "Electronic states in silicon quantum dots multivally artifical atoms"Phys.Rev.. Vol.B68. 155322 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Eto, T.Ashiwa, M.Murata: "Current-Induced Entanglement of Nuclear Spins in Quantum Dots"J.Phys.Soc.Jpn.. Vol.73. 307-310 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Seto, Y.Kokubo, T.Nohda, H.Hamada, H.Kuwano: "Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing"Jpn.J.Appl.Phys.. Vol.40. 2150-2154 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Jeong, D.Nagashima, H.Kuwano, T.Nohda: "Effects of various Hydrogenation Processes on Bias-Stress-Induced Degradation in p-Channel Polysilicon Thin Film Transistors"Jpn.J.Appl.Phys.. Vol.41. 5048-5064 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Yokoyama, H.Onizuka, Y.Yoshizawa, H.Kuwano: "Solid-Phase Crystallization Behavior of in-situ Phosphorus-Doped Amorphous Silicon Films Deposited Using Si_2H_6 and PH_3"J.Appl.Phys.. Vol.94. 770-773 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Matsumoto: "Diffusion in Si"Encyclopedia of Materials : Science and Technology (PERGAMON PRESS). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Eto: "Entanglment Mechanism of nuclear spin In quantum dots"Solid-State Physics. Vol.38. 725-732 (2003)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2005-04-19  

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