2002 Fiscal Year Final Research Report Summary
Research on functional electronic devices based on straind-Si on SiGe alloy substrates
| Project/Area Number |
13555086
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
USAMI Noritaka Institute for Materials Research, Associate Professor, 金属材料研究所, 助教授 (20262107)
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| Co-Investigator(Kenkyū-buntansha) |
KOH Shinji The University of Tokyo, Research Associate, 大学院・工学系研究科, 助手 (50323663)
NAKAGAWA Kiyokazu Yamanashi University, Professor, クリスタル科学研究センター, 教授 (40324181)
NAKAJIMA Kazuo Institute for Materials Research, Professor, 金属材料研究所, 教授 (80311554)
UJIHARA Toru Institute for Materials Research, Research Associate, 金属材料研究所, 助手 (60312641)
SAZAKI Gen Institute for Materials Research, Lecturer, 金属材料研究所, 講師 (60261509)
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| Project Period (FY) |
2001 – 2002
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| Keywords | Silicon Germanium / Molecular Beam Epitaxy / Multicomponent Zone-melting Method / Strain-controlled thin film / Modulation doping / Two-dimensional hole gas |
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| Research Abstract |
The purpose of this research is to realize strain-controlled Si-based heterostructures with superior electronic properties on homemade SiGe substrates wish uniform Ge composition.
Firstly, we tried to develop a feedback control system of the crystal-melt interface position and temperature based on in-situ monitoring system. Automatic recognition of the interface position was successful by binarization and differentiation of the CCD image. By utilizing newly developed system, we succeeded in growing SiGe with uniform composition. To improve the crystal quality, we systematically changed the temperature gradient at around the crystal-melt interface. At a result, systematic decrease of the line-width of the X-ray rocking curve and increase of the intensity were confirmed presumably due to the suppression of constitutional supercooling. In addition, crystal quality was found to be strongly dependent on the orientation of the seed crystal.
On homemade SiGe, modulation doped structure with strained-Ge channel was grown by molecular beam epitaxy. Although improved carrier mobility was not achieved, controllability of strain was confiemed.
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