2003 Fiscal Year Final Research Report Summary
In-Situ Measurement of Local Crystal Strain Under Device Operation by Highly Parallel X-ray Microbeam.
| Project/Area Number |
13555096
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Himeji Institute of Technology |
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Principal Investigator |
MATSUI Junji Himeji Institute of Technology, Graduate School of Science, Professor, 大学院・理学研究科, 教授 (10295751)
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| Co-Investigator(Kenkyū-buntansha) |
KAGOSHIMA Yasushi Himeji Institute of Technology, Graduate School of Science, Associate Professor, 大学院・理学研究科, 助教授 (10224370)
TSUSAKA Yoshiyuki Himeji Institute of Technology, Graduate School of Science, Research Associate, 大学院・理学研究科, 助手 (20270473)
KIMURA Shigeru Japan Synchrotron Radiation Institute, Senior Scientist, 利用研究促進部門, 主幹研究員 (50360821)
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| Project Period (FY) |
2001 – 2003
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| Keywords | Semiconductor Substrate / Lattice Strain / X-ray Microbeam / Synchrotron Radiation / Device Characteristics / LED / Semiconductor Laser / Silicon-on-Insulator Crystal |
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| Research Abstract |
It has been well known that the crystal lattice strain in semiconducting materials like silicon and gallium arsenide give origins for crystalline defects such as dislocations and may affect some device characteristics and their operation lives. As compared with usual X-ray diffractometry combined with laboratory X-ray sources, an X-ray microbeam made of a synchrotron light source at SPring-8 is very useful to measure minute strain being as small as less than 10^<-4>. The X-ray microbeam here obtained has a few μm in size and high parallelism.
By scanning the X-ray microbeam on surfaces of various semiconductor crystal samples such as silicon-on-insulator (SOL) layers, SiGe layers and also GaAlAs LED crystals, local strain magnitude less than 10^<-4> were measured even during device operation. This technique will be promising for more precise characterization of next-generation substrates like strained silicon for future high-speed devices.
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Research Products
(26 results)
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[Journal Article] Evaluation of Lattice Strain In Silicon Substrate Beneath Aluminum Conductor Film Using High-Resolution X-Ray Microbeam Diffactometry2002
Author(s)
K.Yokoyama, H.Kurihara, S.Takeda, M.Urakawa, K.Watanabe, M.Katou, N.Inoue, N.Miyamoto, Y.Tsusaka, Y.Kagoshima, J.Matsui
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Journal Title
Japan. J. Appl. Phys. 41
Pages: 6094-6097
Description
「研究成果報告書概要(和文)」より
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[Journal Article] Evaluation of Lattice Strain in Silicon Substrate Beneath Alminum Conductor Film Using High-Resolution X-Ray Microbeam Diffractometry2002
Author(s)
K.Yokoyama, H.Kurihara, S.Takeda, M.Yrakawa, K.Watanabe, M.Katou, N.Inoue, N.Miyamoto, Y.Tsusaka, Y.Kagoshima, J.Matsui
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Journal Title
Japan.J.Appl.Phys. 41
Pages: 6094-6097
Description
「研究成果報告書概要(欧文)」より
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[Journal Article] Study of Local Strain Distribution in Semiconductor Devices Using High-Resolution X-ray Microbeam Diffractometry2001
Author(s)
K.Yokoyama, S Takeda, M.Urakawa, Y.Tsusaka, Y.Kagoshima, J.Matsui, S.Kimura, H.Kimura, K.Kobayashi, T.Ohhira, K.Izumi, J.Matsui
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Journal Title
Nucl. Instrum & Methods A467-468
Pages: 1205-1208
Description
「研究成果報告書概要(和文)」より
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[Journal Article] Study of Local Strain Distribution in Semiconductor Devices Using High-Resolution X-ray Microbeam Diffractometry2001
Author(s)
K.Yokoyama, S.Takeda, M.Urakawa, Y.Tsusaka, Y.Kagoshima, J.Matsui, S.Kimura, H.Kimura, K.Kobayashi, T.Ohhira, K.Izumi, N.Miyamoto
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Journal Title
Nucl.Instrum & Methods A467-468
Pages: 1205-1208
Description
「研究成果報告書概要(欧文)」より
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