2017 Fiscal Year Final Research Report
Properties of ultralow reflectance Si formed by surface structure chemical transfer method
| Project/Area Number |
15H01997
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanostructural physics
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
松本 健俊 大阪大学, 産業科学研究所, 准教授 (20390643)
今村 健太郎 大阪大学, 産業科学研究所, 助教 (60591302)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | シリコンナノクリスタル層 / 屈折率勾配 / 太陽電池 / graded band-gap構造 |
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| Outline of Final Research Achievements |
The valence band energy of a nanocrsytalline Si layer shows a downward shift with the surface structure chemical transfer treatment time, and the energy shift reaches ~0.4eV at maximum. The conduction band energy, on the other hand, is shifted upward by ~0.2eV at maximum. The conduction band of the nanocrystalline Si layer after formation of pn-junction is almost flat. These results show that the nanocrystalline Si layer possesses the grade band-gap structure, leading to effective separation of photo-generated electron hole pairs in the nanocrystalline Si layer, and thus preventing surface recombination.
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| Free Research Field |
半導体表面物性
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