Artificial photosynthesis devices using polarization-engineered nitride semiconductors for visible-light response and high durability

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H02238
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: Sugiyama Masakazu 東京大学, 先端科学技術研究センター, 教授 (90323534)
• Co-Investigator(Kenkyū-buntansha): 藤井 克司 北九州市立大学, 付置研究所, 教授 (80444016)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: 光触媒 / 化合物半導体 / 分極制御 / 有機金属気相成長

Outline of Final Research Achievements

A cathodic photoelectrode was successfully implemented using a polarization-engineered tunnel junction comprising an AlN thin layer and an n-type nitride photo absorber (GaN and InGaN). Cathodic operation was confirmed under Xe-lamp irradiation. The structure of the AlN thin layer was optimized using device simulation but several breakthroughs were necessary to implement the structure as designed, such as low-temperature growth and novel gas-switching sequence between GaN and AlN layers. Furthermore, modification of the GaN surface with Pt allowed us to sprit water photoelectrochemically without external bias application.

Free Research Field

電気電子材料工学