Operando spectromicroscopy that bridges the gap betwenn material properties and device performances of 2D materials

2017 Fiscal Year Final Research Report

• Project/Area Number: 15H03560
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tohoku University
• Principal Investigator: Fukidome Hirokazu 東北大学, 電気通信研究所, 准教授 (10342841)
• Co-Investigator(Kenkyū-buntansha): 末光 眞希 東北大学, 電気通信研究所, 教授 (00134057)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Keywords: オペランド / X線 / グラフェン / 二次元原子薄膜 / トポロジカル絶縁体

Outline of Final Research Achievements

The gap between material properties and device performances of 2D materials inhibits high performance of 2D material-based devices. To solve this gap, we performed studies on a development of operando x-ray spectromicroscopy and its application to novel devices. As a result, we established the method to probe electronics states of surfaces and interfaces of devices with a high spatial resolution (70 nm in lateral direction). By using operando x-ray spectromicroscopy, we developed a novel graphene transistors that enables to the drain current saturation. Furthermore, we observed electronic states of Molybdenum disulfied FET microscopically. Finally, we extended our research into other novel devices, such as topological insulators.

Free Research Field

表面科学、半導体工学、結晶工学