2017 Fiscal Year Final Research Report
Fabrication of tensile-strained single-crystalline GeSn wires on an insulator by lateral liquid-phase epitaxy towards electronic and opto-electronic device applications
| Project/Area Number |
15H03975
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
WATABABE Heiji 大阪大学, 大学院工学研究科, 教授 (90379115)
HOSOI Takuji 大阪大学, 大学院工学研究科, 助教 (90452466)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Keywords | 電気・電子材料 / 作成・評価技術 / エピタキシャル成長 / 半導体 / ゲルマニウム / シリコンフォトニクス |
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| Outline of Final Research Achievements |
We have fabricated GeSn wires by liquid-phase epitaxy during rapid thermal annealing. The field effect transistor with the GeSn wires exhibited field effect hole mobility of 423 cm2/Vs. The GeSn pn-photodiode showed good optical response for 1.55 um wavelength.
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| Free Research Field |
電子デバイス材料
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