2016 Fiscal Year Final Research Report
Defect Evaluation of InAlN after Device Process and their Electrical Properties
| Project/Area Number |
15H06070
|
|---|
| Research Category |
Grant-in-Aid for Research Activity Start-up
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | University of Tsukuba |
|---|
Principal Investigator |
|
|---|
| Research Collaborator |
UEDONO Akira
GRANDJEAN Nicolas
PALACIOS Tomas
SUIHKONEN Sami
|
|---|
| Project Period (FY) |
2015-08-28 – 2017-03-31
|
| Keywords | パワーデバイス / 窒化物半導体 / 点欠陥 / 結晶成長 / 電気的特性評価 / p型半導体 / イオン注入 / 高温熱処理 |
|---|
| Outline of Final Research Achievements |
In this work, we aimed to improve the performance of III-nitrides electrical devices, which have attracted much attention for high-frequency and high-power applications. There are fewer reports on point defects in comparison with dislocations in III-nitride semiconductors. We investigated the relation between point defects and electrical properties in p-type GaN and n-type AlN films.
(i) The highest hole concentrations was achieved in the p-type GaN layer, which was grown at low growth temperature under nitrogen-rich conditions.
(ii) The n-type conductance of Si-ion implanted AlN was shown after very high temperature annealing of 1500 degreeC. Using the n-type AlN films, the first demonstration of AlN-channel transistors was achieved.
|
| Free Research Field |
窒化物半導体の結晶成長
|
