Self-assembled monolayer-based gate dielectrics in MIS structure and its application to functional nano-electronic devices

2016 Fiscal Year Final Research Report

• Project/Area Number: 15H06204
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Kawanago Takamasa 東京工業大学, 科学技術創成研究院, 助教 (30726633)
• Research Collaborator: Oda Shunri ; Du Wanjing ; Ikoma Ryo
• Project Period (FY): 2015-08-28 – 2017-03-31
• Keywords: 自己組織化単分子膜 / 二硫化モリブデン / 電界効果トランジスタ / 界面特性

Outline of Final Research Achievements

In this study, we apply self-assembled-monolayer (SAM)-based gate dielectrics to the fabrication of molybdenum disulfide (MoS2) field-effect transistors. A simple fabrication process involving the　selective formation of a SAM on metal oxides in conjunction with the dry transfer of MoS2 flakes was established. A subthreshold slope (SS) of 69 mV/dec and no hysteresis were demonstrated with the ultrathin SAM-based gate dielectrics accompanied by a low gate leakage current. The small SS and no hysteresis indicate the superior interfacial properties of the MoS2/SAM structure. Cross-sectional transmission electron microscopy revealed a sharp and abrupt interface of the MoS2/SAM structure. The SAM-based gate dielectrics are found to be applicable to the fabrication of low-voltage MoS2 field-effect transistors and can also be extended to various layered semiconductor materials. This study opens up intriguing possibilities of SAM-based gate dielectrics in functional electronic devices.

Free Research Field

半導体電子工学