Demonstration of ultrafast resonant tunneling transistor

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K21951
• Research Category: Grant-in-Aid for Challenging Research (Exploratory)
• Allocation Type: Multi-year Fund
• Review Section: Medium-sized Section 21:Electrical and electronic engineering and related fields
• Research Institution: Hokkaido University
• Principal Investigator: Tomioka Katsuhiro 北海道大学, 情報科学研究院, 准教授 (60519411)
• Project Period (FY): 2019-06-28 – 2022-03-31
• Keywords: ナノワイヤ / 超格子 / 共鳴トンネル輸送 / トランジスタ / III-V / FET / 縦型構造

Outline of Final Research Achievements

In this research, we developed a formation of superlattice NWs by selective-are growth technique and demonstrated vertical diode and vertical gate all-around resonant tunneling transistor (VGAA-RTFET) device using the superlattice nanowires for the first time. The demonstrated VGAA-RTFET device has realized high-speed switching properties with high tunneling current and steep subthreshold slope (SS), and material and device technologies that simultaneously solve the TFET problem of high switching current and steep SS have been realized. This has pioneered a new methodology for low-power switching devices and high-frequency devices.

Free Research Field

薄膜成長、半導体デバイス、半導体ナノ構造

Academic Significance and Societal Importance of the Research Achievements

本研究は、ナノワイヤ材料の中に超格子構造を作製することで従来のスイッチデバイスにはない高い電流値と、スイッチ素子の電力を決定するサブスレッショルド係数の急峻化を実証した。本成果は国内外で前例のない材料・デバイスの開発であり、低消費電力回路用のスイッチ素子応用だけでなく、超低消費電力の無線発振素子の実現などへの応用展開が期待できる。