2011 Fiscal Year Final Research Report
Pressure effect and its mechanism of interlayer coupling on the artificial lattice with semiconductor/ferromagnetic phaces of iron silicide.
| Project/Area Number |
21560022
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Fukuoka Institute of Technology |
|---|
Principal Investigator |
TAKEDA Kaoru 福岡工業大学, 工学部, 講師 (90236464)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
NAKANISHI Takeshi 福岡工業大学, 工学部, 准教授 (70297761)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
YOSHITAKE Tsuyoshi 九州大学, 総合理工学研究科(研究院), 准教授 (40284541)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Keywords | ヘテロ構造 / 鉄シリサイド / 人工格子 / 静水圧力 / 電気抵抗率 |
|---|
| Research Abstract |
We present preliminary results of electrical resistivity measurements of Fe3Si/FeSi2 aetificial lattices under hydrostatic pressures up to 2.6GPa. The measurement have been performed on the Fe3Si single layer thin film and the[Fe3Si(25A)/FeSi2(7.5A)] 20 multilayer thin film with anti-ferromagnetically coupling among Fe3Si layers. For the Fe3Si single layer thin film, it is observed that the resistivity increases with increasing pressure, showing a tendency to saturate. On the other hand, it is found that the resistivity of the[Fe3Si(25A)/FeSi2(7.5A)]_<20> multilayer thin film increases monotonically with increasing pressure. The pressure effect of the resistivity for Fe3Si single layered thin film were less than+0.6%/GPa, and for FeSi2 single layered thin film, were less than+1.0%/GPa, and for the[Fe3Si(25A)/FeSi2(7.5A)] 0_<20> multilayer thin film with anti-ferromagnetically coupling, were less than+2%/GPa, and for ferromagnetocally coupling, were less than+1.0%/GPa.
|
Research Products
(3 results)
