2012 Fiscal Year Final Research Report

New method of low energy, low environmental loading of crystal silicon silicon thin film to formation method and development of solar cell

Research Project

Project/Area Number	22651029
Research Category	Grant-in-Aid for Challenging Exploratory Research
Allocation Type	Single-year Grants
Research Field	Environmental technology/Environmental materials
Research Institution	Kanagawa Institute of Technology
Principal Investigator	HONDA Kazuhiro 神奈川工科大学, 工学部, 准教授 (40257415)
Project Period (FY)	2010 – 2012
Keywords	環境保全技術
Research Abstract	The formation of the crystal silicon by the heat treatment under the atmosphere of about 250℃ of [The solid which solidified in interweaving Si(OH)4 dehydration polymer and fatty acid salt to each other] was examined. From thermo-gravimetric analysis (TGA), XRD measurement and laser Raman spectroscopy measurement which made the heating temperature to be a parameter, it became clear that the silicon formation is dependent on length of the hydrophobic group of fatty acid salt resistant and heating temperature (speed), and silica (SiO2) is simultaneously formed as an impurity. The crystallite silica can be formed in the ITO glass surface, and the size of the crystallite silicon can be expected with that it is controllable by type of the fatty acid salt and thermal condition and that to add the continuous optical response characteristics is possible.

(2 results)