2012 Fiscal Year Final Research Report
Development of a deep-UV light-emitting device by a novel pulsed laser deposition technique
| Project/Area Number |
23656444
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Material processing/treatments
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Keywords | 薄膜プロセス / レーザー |
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| Research Abstract |
Fabrication of a high-quality boron nitride film for a deep-UV light-emitting diode by a novel pulsed laser deposition (PLD) technique combining high-intensity laser pulses with frozen target was investigated. A diamond-like carbon (DLC) film with high sp3 content was prepared by PLD using a frozen benzene target by a newly developed film formation system. Based on the results, a preparation technique of a high-quality boron nitride film for development of a deep-UV light-emitting diode was established.
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Research Products
(3 results)
