2017 Fiscal Year Final Research Report
Control of site selective doping and carrier transport in core-shell heterojunction nanowires
Project/Area Number |
26246021
|
Research Category |
Grant-in-Aid for Scientific Research (A)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Crystal engineering
|
Research Institution | National Institute for Materials Science |
Principal Investigator |
Fukata Naoki 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究者 (90302207)
|
Co-Investigator(Kenkyū-buntansha) |
宮崎 剛 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, MANA主任研究者 (50354147)
|
Project Period (FY) |
2014-04-01 – 2018-03-31
|
Keywords | 結晶成長 / シリコン / ゲルマニウム / ナノワイヤ / ヘテロ接合 / 半導体 / ラマン分光 / 第一原理計算 |
Outline of Final Research Achievements |
The purpose of this study is to realize next-generation high mobility transistor channels using Si/Ge and Ge/Si core-shell heterostructure nanowires. We performed large-scale first principle calculations on K-computer and clarified electronic states in Si/Ge and Ge/Si core-shell nanowires (NWs) composed of 3 million atoms. Based on the theoretical results, we made it possible to form Si/Ge and Ge/Si core-shell NWs with sharp interfaces. We could also establish site-selective doping in core-shell NWs, resulting in the formation of high mobility channel by separating the carrier transport region from the impurity-doped region.
|
Free Research Field |
半導体物性工学
|