Development of memory diode and its application to densest array memory

2016 Fiscal Year Final Research Report

• Project/Area Number: 26289099
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: Suda Yoshiyuki 東京農工大学, 工学(系)研究科(研究院), 教授 (10226582)
• Co-Investigator(Kenkyū-buntansha): 塚本 貴広 東京農工大学, 工学(系)研究科(研究院), 助教 (50640942)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 半導体メモリ / 不揮発性メモリ / 抵抗変化型メモリ / ＰＮダイオード / クロスポイント型配列 / ＳｉＣ / 界面準位

Outline of Final Research Achievements

We clarified the fundamental structure and operation physics about the proposed memory diode having both resistive-nonvolatile-memory and rectifying characteristics which are suited for the theoretically densest cross-point array. We analyzed the origin of electron-trapping defects which contribute to the memory effect, and clarified the relationship between the electron-trap-layer structures, the fabrication methods, and the memory characteristics. As each specification, we obtained endurance characteristics of 10-to-the-power-7 on/off switching cycles and writing speeds of less than 20 microseconds which surpass those of the current flash memories. Further, we have succeeded in developing the low-temperature fabrication processes with fabrication temperatures of not more than 473 K and show the compatibility of the fabrication of the memory diode with that of metal-layer-sandwiched cross-point memory array.

Free Research Field

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