Research on platform technologies for electronic-photonic integrated circuits based on III-V CMOS photonics

2017 Fiscal Year Final Research Report

• Project/Area Number: 26709022
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: The University of Tokyo
• Principal Investigator: Takenaka Mitsuru 東京大学, 大学院工学系研究科(工学部), 准教授 (20451792)
• Project Period (FY): 2014-04-01 – 2018-03-31
• Keywords: 光変調器 / トランジスタ / シリコンフォトニクス / CMOSフォトニクス / ウェハボンディング

Outline of Final Research Achievements

We have successfully established the process technologies to integrate active and passive waveguide photonic devices on the III-V CMOS photonics platform. Thus, we have demonstrated the carrier-injection InGaAsP optical modulator on the III-V-OI wafer. Moreover, the monolithic integration of the InGaAsP optical modulator and InGaAs MOS transistor has been successfully demonstrated, exhibiting the feasibility of the electronic-photonic integration capability of the III-V CMOS photonics platform. Through the investigation of optical modulators based on the free-carrier effect, we have invented the Si hybrid MOS optical modulator which exhibits the highest modulation efficiency among semiconductor-based optical modulators. We have also proposed the III-V on SiC platform which can dramatically improve the heat dissipation.

Free Research Field

光電子集積回路