Nano MOSFET Fluctuations and Device Integrity
| Project/Area Number |
18063006
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | The University of Tokyo |
|---|
Principal Investigator |
HIRAMOTO Toshiro The University of Tokyo, 生産技術研究所, 教授 (20192718)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
更屋 拓哉 東京大学, 生産技術研究所, 助手 (90334367)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
SARAYA Takuya 東京大学, 生産技術研究所, 助手 (90334367)
|
|---|
| Project Period (FY) |
2006 – 2009
|
| Project Status |
Completed (Fiscal Year 2009)
|
| Budget Amount *help |
¥51,200,000 (Direct Cost: ¥51,200,000)
Fiscal Year 2009: ¥13,800,000 (Direct Cost: ¥13,800,000)
Fiscal Year 2008: ¥13,800,000 (Direct Cost: ¥13,800,000)
Fiscal Year 2007: ¥11,800,000 (Direct Cost: ¥11,800,000)
Fiscal Year 2006: ¥11,800,000 (Direct Cost: ¥11,800,000)
|
|---|
| Keywords | 特性ばらつき / しきい値電圧 / SOI / SRAM / MOSFET / 半導体 / 不純物揺らぎ / 微細化 / VLSI / ランダムテレグラフノイズ / 正規分布 / 半導体超微細化 / 基板バイアス効果 / 低消費電力 / 不純物ゆらぎ |
|---|
| Research Abstract |
Random variability has been studied by measurements and simulation. It has been clarified that SOI MOSFETs with very thin buried oxide is less sensitive to random dopant fluctuations. A new method of self-suppression of variability after chip fabrication has been proposed and its validity has been demonstrated by simulation.
|
Report
(5 results)
Research Products
(68 results)
