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Potential induced degradation mechanism due to Na impurities in Si megasolar systems investigated by in-situ transmission electron microscopy

Research Project

Project/Area Number 18K05009
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 31020:Earth resource engineering, Energy sciences-related
Research InstitutionTohoku University

Principal Investigator

Yutaka Ohno  東北大学, 金属材料研究所, 准教授 (80243129)

Co-Investigator(Kenkyū-buntansha) 森戸 春彦  東北大学, 金属材料研究所, 准教授 (80463800)
Project Period (FY) 2018-04-01 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2020: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2019: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2018: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Keywords電圧誘起ナトリウム集積 / シリコン太陽電池 / メガソーラー
Outline of Final Research Achievements

Transmission electron microscopy combined with ab initio calculations reveals that, Na atoms would agglomerate at stacking faults (SFs) under an electronic interaction, reducing the SF formation energy. The energy would decrease with the decrease of the Fermi level: it is reduced by more than 10 mJ/m^2 in p-type Si, whereas it was barely reduced in n-type Si. Owing to the energy reduction, Na atoms agglomerating at SFs in p-type Si are stable compared with those in n-type Si. It is also shown that Na atoms preferentially interact with grain boundaries (GBs), as well as with SFs, and the degree of the GB interaction would be related to the GB energy; the degree is high for GBs with a high GB energy such as random-angle GBs, and it is low for GBs with a low GB energy such as ∑3{111} GBs and SFs.

Academic Significance and Societal Importance of the Research Achievements

太陽電池中のナトリウムの移動・集積過程は、モジュール構造(ガラス、封止材の材質)、セル構造(基板、極性、キャリア濃度)、外部環境(雰囲気、電圧、光照射の条件)に複雑に依存する。セル化・モジュール化されていないシリコン単結晶へ意図的に積層欠陥とナトリウムを添加することで、シリコンの極性やフェルミ準位、小数キャリア密度に依存するナトリウムの移動・集積の素過程が初めて明らかになった。また、ナトリウムは積層欠陥だけでなく一般の粒界とも反応し、その反応性は粒界エネルギーに依存することも分かった。これらは、ナトリウムに関連する電圧誘起劣化が生じにくいシリコン太陽電池セルを設計する上で重要な情報である。

Report

(4 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Research-status Report
  • 2018 Research-status Report
  • Research Products

    (20 results)

All 2021 2020 2019 2018

All Journal Article (5 results) (of which Peer Reviewed: 5 results,  Open Access: 4 results) Presentation (15 results) (of which Int'l Joint Research: 8 results,  Invited: 4 results)

  • [Journal Article] Insight into segregation sites for oxygen impurities at grain boundaries in silicon2021

    • Author(s)
      Y. Ohno, J. Ren, S. Tanaka, M. Kohyama, K. Inoue, Y. Shimizu, Y. Nagai, H. Yoshida
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 4 Pages: 041003-041003

    • DOI

      10.35848/1882-0786/abe80d

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces2020

    • Author(s)
      Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, S. Takeda, R. Miyagawa, Y. Shimizu, Y. Nagai
    • Journal Title

      Applied Surface Science

      Volume: 525 Pages: 146610-146610

    • DOI

      10.1016/j.apsusc.2020.146610

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Impact of focused ion beam on structural and compositional analysis of interfaces fabricated by surface activated bonding2019

    • Author(s)
      Ohno Yutaka、Yoshida Hideto、Kamiuchi Naoto、Aso Ryotaro、Takeda Seiji、Shimizu Yasuo、Nagai Yasuyoshi、Liang Jianbo、Shigekawa Naoteru
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SB Pages: SBBB05-SBBB05

    • DOI

      10.7567/1347-4065/ab4b15

    • NAID

      210000157282

    • Related Report
      2019 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam2019

    • Author(s)
      Ohno Yutaka、Yoshida Hideto、Kamiuchi Naoto、Aso Ryotaro、Takeda Seiji、Shimizu Yasuo、Ebisawa Naoki、Nagai Yasuyoshi、Liang Jianbo、Shigekawa Naoteru
    • Journal Title

      Proceedings of the 6th International IEEE Workshop on Low Temperature Bonding for 3D Integration

      Volume: - Pages: 55-55

    • DOI

      10.23919/ltb-3d.2019.8735379

    • Related Report
      2019 Research-status Report
    • Peer Reviewed
  • [Journal Article] Interaction of sodium atoms with stacking faults in silicon with different Fermi levels2018

    • Author(s)
      Y. Ohno, H. Morito, K. Kutsukake, I. Yonenaga, T. Yokoi, A. Nakamura, K. Matsunaga
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 6 Pages: 61303-61303

    • DOI

      10.7567/apex.11.061303

    • NAID

      210000136222

    • Related Report
      2018 Research-status Report
    • Peer Reviewed / Open Access
  • [Presentation] 低温FIB法とアトムプローブ・STEM複合法による半導体粒界の構造・組成精密評価2021

    • Author(s)
      大野裕
    • Organizer
      日本顕微鏡学会第77回学術講演会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] Formation process of high thermal-stability diamond/Si and diamond/GaAs heterointerfaces by surface activated bonding2020

    • Author(s)
      Y. Ohno, J. Liang, Y. Shimizu, H. Yoshida, N. Shigekawa
    • Organizer
      Materials Research Society (MRS) 2020 Fall Meeting
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Microscopic picture of direct bonding via surface activation for low-resistance Si/wide-gap semiconductor heterointerfaces2020

    • Author(s)
      Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, R. Miyagawa, Y. Shimizu, Y. Nagai
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME) 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 表面活性化接合法で作成したSi/ワイドギャップ半導体ヘテロ界面の微視的描像2020

    • Author(s)
      大野裕
    • Organizer
      独立行政法人日本学術振興会接合界面創成技術第191委員会 第28回研究会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 低温FIB-断面STEM法によるSi/Diamond表面活性化接合界面の構造評価2020

    • Author(s)
      大野裕, 梁剣波, 吉田秀人, 清水康雄, 永井康介, 重川直輝
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 結晶学および計算科学によるSiとNaの反応機構の解明2020

    • Author(s)
      大野裕
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Research-status Report
    • Invited
  • [Presentation] 表面活性化のためのAr原子線照射がSi/GaAs接合界面の構造に及ぼす影響2019

    • Author(s)
      大野裕
    • Organizer
      独立行政法人日本学術振興会接合界面創成技術第191委員会 第22回研究会
    • Related Report
      2019 Research-status Report
    • Invited
  • [Presentation] Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam2019

    • Author(s)
      Y. Ohno, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, N. Ebisawa, Y. Nagai, J. Liang, N. Shigekawa
    • Organizer
      6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] Impact of focused ion beam in the structural analysis of semiconductor interfaces fabricated by surface activated bonding2019

    • Author(s)
      Y. Ohno, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, N. Ebisawa, Y. Nagai, J. Liang, N. Shigekawa
    • Organizer
      30th International Conference on Defects in Semiconductors (ICDS30)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] Atomistic structure of Si/GaAs heterointerfaces fabricated by surface activated bonding revealed by STEM combined with low-temperature FIB2019

    • Author(s)
      Y. Ohno, Y. Shimizu, Y. Nagai, R. Aso, N. Kamiuchi, H. Yoshida, J. Liang, N. Shigekawa
    • Organizer
      Materials Research Society (MRS) 2019 Fall Meeting
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] 収束イオン線を用いた半導体界面の解析におけるアーチファクト2019

    • Author(s)
      大野裕, 清水康雄, 海老澤直樹, 永井康介, 吉田秀人, 神内直人, 麻生亮太郎, 竹田精治, 梁剣波, 重川直輝
    • Organizer
      日本顕微鏡学会第75回学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] 表面活性化接合で作成したSi/GaAs界面の低温FIB法による断面TEM評価2019

    • Author(s)
      大野裕, 清水康雄, 永井康介, 麻生亮太郎, 神内直人,吉田秀人, 梁剣波, 重川直輝
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] Interaction of sodium atoms with stacking faults in silicon crystals with different doping levels2018

    • Author(s)
      Y. Ohno, H. Morito, K. Kutsukake, I. Yonenaga
    • Organizer
      10th International Workshop on Crystalline Silicon for Solar Cells (CSSC-10)
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Interaction of Na atoms with stacking faults in Si with different Fermi levels2018

    • Author(s)
      Y. Ohno, H. Morito, I. Yonenaga, T. Yokoi, A. Nakamura, K. Matsunaga
    • Organizer
      Extended Defects in Semiconductors (EDS) 2018
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] Stability of Na atoms at stacking faults in Si depending on the Fermi level2018

    • Author(s)
      Y. Ohno, H. Morito, K. Kutsukake, I. Yonenaga, T. Yokoi, A. Nakamura, K. Matsunaga
    • Organizer
      Materials Research Society (MRS) 2018 Fall Meeting
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research

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Published: 2018-04-23   Modified: 2022-01-27  

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