The fabrication of nano-structure by energy-controlled molecular-beam growth
Project/Area Number |
19560015
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | University of Miyazaki |
Principal Investigator |
OZEKI Masashi University of Miyazaki, 工学部, 教授 (70336288)
|
Co-Investigator(Kenkyū-buntansha) |
FUKUYAMA Atuhiko 宮崎大学, 工学部, 准教授 (10264368)
MAEDA Koji 宮崎大学, 工学部, 准教授 (50219268)
|
Project Period (FY) |
2007 – 2009
|
Project Status |
Completed (Fiscal Year 2009)
|
Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2009: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2008: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2007: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
|
Keywords | 結晶成長 / ナノ構造 / 超音速分子線 / GaAs / 微細構造 / 選択成長 / 塩化メチル / ガリウム砒素 |
Research Abstract |
The new fabrication technique of the GaAs nano-structure was studied by using the energy-controlled source molecules. The best gallium and arsenic sources for this purpose were triisobutylgallium and trisdimethylaminoarsine, respectively. These molecules were injected onto important crystal surfaces and the growth processes were analyzed. The results suggested that the selective growth toward the some crystal axes could be carried out by controlling the incident direction of the source molecules.
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Report
(4 results)
Research Products
(13 results)