Development of selective strain controlling technique in Silicon Germanium hetero-structures

• Project/Area Number: 19760011
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Musashi Institute of Technology
• Principal Investigator: SAWANO Kentarou Musashi Institute of Technology, 工学部, 講師 (90409376)
• Project Period (FY): 2007 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥3,380,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥180,000); Fiscal Year 2008: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2007: ¥2,600,000 (Direct Cost: ¥2,600,000)
• Keywords: SiGe / 歪み / イオン注入法

Research Abstract

これまで半導体技術は素子の縮小化によって発展を遂げてきたが、近年その縮小化に物理的限界が近づき、新たな技術革新が必須となっている。その中で、シリコン(Si)に結晶歪みを加えた「歪みSi」チャネルが実デバイスに導入されるに至った。今後のさらなるLSIの発展に向けて、この「歪み」の役割がますます高まることは必至であり、歪み制御技術の高度化、新技術開発は最重要かつ不可欠な課題である。本研究では、これまでとは全く異なる新手法を用いた歪みの制御技術開発を行った。具体的には、イオン注入法による選択的欠陥導入を行い、SiGe層における歪み場分布の面内任意制御および異方性歪み場を実現することに成功した。

Research Products

• [Journal Article] Local Control of Strain in SiGe by Ion Implantation Technique (2009)
  • Author(s): K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami , K. Nakagawa, Y. Shiraki
  • Journal Title: Journal of Crystal Growth 311 Pages: 806-808
  • Peer Reviewed
• [Journal Article] Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method (2009)
  • Author(s): Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Sato, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa, Y. Shiraki
  • Journal Title: Journal of Crystal Growth 311 Pages: 825-828
  • Peer Reviewed
• [Journal Article] Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions (2008)
  • Author(s): K. Sawano, A. Fukumoto, Y. Hoshi, J. Yamanaka, K. Nakagawa, and Y. Shiraki
  • Journal Title: Thin Solid Films 517 Pages: 87-89
  • Peer Reviewed
• [Journal Article] Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique (2008)
  • Author(s): K. Sawano, A. Fukumoto, Y. Hoshi, K. Nakagawa, and Y. Shiraki
  • Journal Title: Thin Solid Films 517 Pages: 353-355
  • Peer Reviewed
• [Journal Article] Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation (2008)
  • Author(s): Kentarou Sawano, Yusuke Hoshi, Atsunori Yamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, Yasuhiro Shiraki
  • Journal Title: Applied Physics Express 1 Pages: 121401-121401
  • NAID: 10025083624
  • Peer Reviewed
• [Journal Article] Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions (2008)
  • Author(s): K. Sawano, A. Fukumoto, Y Hoshi, J. Yamanaka, K. Nakagawa, and Y Shiraki
  • Journal Title: Thin Solid Films 517 Pages: 87-89
  • Peer Reviewed
• [Journal Article] Local Control of Strain in SiGe by Ion Implantation Technique (2008)
  • Author(s): K. Sawano, Y. Hoshi, Y Hiraoka, N. Usami, K. Nakagawa, Y. Shiraki
  • Journal Title: Journal of Crystal Growth 311 Pages: 806-808
  • Peer Reviewed
• [Journal Article] Strained-Si n-channel metal-oxide-semiconductor field-effect-transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique (2007)
  • Author(s): K. Sawano, A. Fukumoto, Y. Hoshi, Y. Shiraki, J. Yamanaka, and K. Nakagawa
  • Journal Title: Appl. Phys. Lett 90 Pages: 202101-202101
  • Peer Reviewed
• [Journal Article] Fabrication of SiGe Virtual Substrates by Ion Implantation Technique (2007)
  • Author(s): K. Sawano, Y. Shiraki, and K. Nakagawa
  • Journal Title: ECS Transaction 11 Pages: 75-75
  • Peer Reviewed
• [Journal Article] Strained-Si n-channel metal-oxide-semiconductor field-effect-transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique (2007)
  • Author(s): K. Sawano, A. Fukumoto, Y. Hoshi, Y. Shiraki, J. Yamanaka, K. Nakagawa
  • Journal Title: Applied Physics Letters 90
  • Peer Reviewed
• [Journal Article] Fabrication of SiGe Virtual Substrates by Ion Implantation Technique (2007)
  • Author(s): K. Sawano, Y. Shiraki, K. Nakagawa
  • Journal Title: ECS Transaction 11 Pages: 75-89
  • Peer Reviewed
• [Presentation] 選択的イオン注入により作製したSiGe層における一軸性歪みの観測 (2008)
  • Author(s): 山田淳矩,澤野憲太郎,星裕介,平岡良康,宇佐美徳隆,中川清和,白木靖寛
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] Siイオン注入法により作製されたSiGeバッファー層の歪緩和過程 (2008)
  • Author(s): 星裕介,澤野憲太郎,平岡良康,山田淳矩,宇佐美徳隆,中川清和,白木靖寛
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] Fabrication of thin strain-relaxed SiGe buffer layers with high-Ge composition by ion implantation method (2008)
  • Author(s): Y. Hoshi, K. Sawano, Y. Hiraoka, N. Usami, K. Nakagawa, and Y. Shiraki
  • Organizer: 4th Asian Conference on Crystal Growth and Crystal Technology
  • Place of Presentation: (CGCT-4), Sendai
• [Presentation] Local Control of Strain in SiGe by Ion Implantation Technique (2008)
  • Author(s): K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa, Y. Shiraki
  • Organizer: 4th Asian Conference on Crystal Growth and Crystal Technology
  • Place of Presentation: (CGCT-4), Sendai
• [Presentation] Local Strain Control of SiGe by Selective Ion Implantation Technique (2008)
  • Author(s): K. Sawano, Y. Hoshi, Y. Hiraoka, S. Kannan, Y. Shiraki, N. Usami, and K. Nakagawa
  • Organizer: 4th International SiGe Technology and Device Meeting (ISTDM) 2008
  • Place of Presentation: Taiwan
• [Presentation] Development of Thin SiGe Virtual Substrate with High Ge Composition by Ion Implantation Method (2008)
  • Author(s): Yusuke Hoshi, Kentarou Sawano, Yoshiyasu Hiraoka, Yuu Satoh, Atsunori Yamada, Yuta Ogawa, Yasuhiro Shiraki, Noritaka Usami, and Kiyokazu Nakagawa
  • Organizer: 4th International SiGe Technology and Device Meeting (ISTDM) 2008
  • Place of Presentation: Taiwan
• [Presentation] 選択的イオン注入法によるSiGe層の面内歪み制御 (2008)
  • Author(s): 平岡良康,星裕介,河南信治,澤野憲太郎,中川清和,宇佐美徳隆,白木靖寛
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学(千葉)
• [Presentation] Local Strain Control of SiGe by Selective Ion Implantation Technique (2008)
  • Author(s): K. Sawano, Y. Hoshi, Y. Hiraoka, S. Kannan, Y. Shiraki, N. Usami, and K. Nakagawa
  • Organizer: 4th International SiGe Technology and Device Meeting (ISTDM) 2008
  • Place of Presentation: 台湾、新竹
• [Presentation] Local Control of Strain in SiGe by Ion Implantation Technique (2008)
  • Author(s): K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa, Y. Shiraki
  • Organizer: 4th Asian Conference on Crystal Growth and Crystal Technology
  • Place of Presentation: 4th Asian Conference on Crystal Growth and Crystal Technology
• [Presentation] Development of Thin SiGe Virtual Substrate with High Ge Composition by Ion Implantation Method (2008)
  • Author(s): Yusuke Hoshi, Kentarou Sawano, Yoshiyasu Hiraoka, Yuu Satoh, Atsunori Yamada, Yuta Ogawa, Yasuhiro Shiraki, No ritaka Usami, and Kivokazu Nakagawa
  • Organizer: 4th International SiGe Technology and Device Meeting (ISTDM) 2008
  • Place of Presentation: 台湾、新竹
• [Presentation] Fabrication of thin strain-relaxed SiGe buffer layers with high-Ge comp osition by ion implantation method (2008)
  • Author(s): Y. Hoshi, K. Sawano, Y. Hiraoka, N. Usami, K. Nakagawa, and Y. Shiraki
  • Organizer: 4th Asian Conference on Crystal Growth and Crystal Technology
  • Place of Presentation: 東北大学 (仙台)
• [Presentation] 選択的イオン注入により作製したsiGe層における-軸性歪みの観測 (2008)
  • Author(s): 山田淳矩, 澤野憲太郎, 星裕介, 平岡良康, 宇佐美徳隆, 中川清和, 白木靖寛
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] Fabrication of SiGe Virtual Substrates by Ion Implantation Technique (2007)
  • Author(s): K. Sawano, Y. Shiraki, and K. Nakagawa
  • Organizer: The 212th Meeting of the Electrochemical Society, ULSI Process Integration 5 (招待講演)
  • Place of Presentation: Washington DC, USA
• [Presentation] イオン注入法により作製した薄膜SiGe緩和層上の歪みSi-nMOSFET (2007)
  • Author(s): 澤野憲太郎、福本敦之、星裕介、中川清和、白木靖寛
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
• [Presentation] Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions (2007)
  • Author(s): K. Sawano, A. Fukumoto, Y. Hoshi, J. Yamanaka, K. Nakagawa, and Y. Shiraki
  • Organizer: 5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)
  • Place of Presentation: Marseille, France
• [Presentation] Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique (2007)
  • Author(s): K. Sawano, A. Fukumoto, Y. Hoshi, K. Nakagawa, and Y. Shiraki
  • Organizer: 5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)
  • Place of Presentation: Marseille, France
• [Presentation] Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions (2007)
  • Author(s): K. Sawano, A. Fukumoto, Y. Hoshi, J. Yamanaka, K. Nakagawa, and Y. Shiraki
  • Organizer: 5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)
  • Place of Presentation: フランス、マルセイユ
• [Presentation] Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique (2007)
  • Author(s): K. Sawano, A. Fukumoto, Y. Hoshi, K. Nakagawa, and Y. Shiraki
  • Organizer: 5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)
  • Place of Presentation: フランス、マルセイユ
• [Presentation] Fabrication of SiGe Virtual Substrates by Ion Implantation Technique (2007)
  • Author(s): K. Sawano, Y. Shiraki, and K. Nakagawa
  • Organizer: The 212th Meeting of the Electrochemical Society, ULSI Process Integration 5
  • Place of Presentation: ワシントンDC