| Project/Area Number |
19K05204
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 28030:Nanomaterials-related
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
フロランス アントワーヌ 北陸先端科学技術大学院大学, 先端科学技術研究科, 特任准教授 (30628821)
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| Project Period (FY) |
2019-04-01 – 2024-03-31
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| Project Status |
Discontinued (Fiscal Year 2023)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2021: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2020: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2019: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | silicene / exfoliation / transfer / h-BN / ZrB2 / silicon-on-insulator / hexagonal boron nitride / zirconium diboride / e-beam lithography / SOI / Silicene |
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| Outline of Research at the Start |
the stability in air of h-BN-encapsulated silicene on ZrB2 thin film will be used to explore methods to fabicate silicene-based devices by exfoliating silicene layers from the ZrB2 thin film, transfering these layers to an insulating substrate, passivating the transferred silicene to prevent its oxidation and implementing electrical contacts.
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| Outline of Annual Research Achievements |
While the initial project was considering mechanical methods to exfoliate and transfer silicene/h-BN bilayer from the ZrB2 thin film it was grown on, an other approach was found to be more suitable: the exfoliation through a wet process: The ZrB2 thin film is grown on the silicon membrane of silicon on insulator substrate, which can then be exfoliated through the chemical etching of the oxide layer by a solution of hydrofluoride.
An other part of the project was the patterning of the silicene/h-BN bilayer through the patterning by e-beam lithography of the ZrB2 thin film before the formation of the bilayer. The possibility of this process involving the etching of the ZrB2 thin film by a solution of H3PO4, was demonstrated even though its conditions still need to be optimized.
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