Exfoliation of intercalated silicene: Towards the fabrication of silicene-based devices
| Project/Area Number |
19K05204
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 28030:Nanomaterials-related
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
フロランス アントワーヌ 北陸先端科学技術大学院大学, 先端科学技術研究科, 講師 (30628821)
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| Project Period (FY) |
2019-04-01 – 2024-03-31
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| Project Status |
Granted (Fiscal Year 2022)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2021: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2020: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2019: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | silicene / exfoliation / hexagonal boron nitride / zirconium diboride / e-beam lithography / SOI / Silicene |
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| Outline of Research at the Start |
the stability in air of h-BN-encapsulated silicene on ZrB2 thin film will be used to explore methods to fabicate silicene-based devices by exfoliating silicene layers from the ZrB2 thin film, transfering these layers to an insulating substrate, passivating the transferred silicene to prevent its oxidation and implementing electrical contacts.
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| Outline of Annual Research Achievements |
Improving the patterning of zirconium diboride thin film by e-beam lithography process was investigated by means of characterzation of patterned thin films with various techniques.
These characterizations pointed out that phosphoric acid (H3PO4) is a suitable etchant compared to other usual etchants like HF. However, etching at room temperature was found to be slow and to results into overetching below the edges of the photoresist. These investigations gave precious insights into the dimensions and the aspect ratio of the ribbons that can be realized through e-beam lithography.
These characterizations also demonstrate that any of the steps of e-beam lithography does not affect the surface of zirconium diboride thin films which is of first importance to make possible the growth of silicene.
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| Current Status of Research Progress |
Current Status of Research Progress
3: Progress in research has been slightly delayed.
Reason
One important step of the project is the growth of h-BN-encapsulated silicene on zirconium diboride thin films grown on SOI. It has been decided to implement a nitrogen plasma source and a silicon source on the system in which they are grown. The possibility of preparing h-BN-encasulated silicene sheets on zirconium diboride in a same system will represent a significant gain of time. More importantly, this would make possible the fabrication of large scale samples (10 x 20 mm2 instead of 1 x 10 mm2 up to now). This will also make possible the realization of h-BN-encapsulated silicene sheets on zirconium diboride thin films patterned by electron-beam lithography without requiring the cutting of the sample after the patterning, which can cause damages.
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| Strategy for Future Research Activity |
The objective of the experimental work for the last year of the project is to achieve three main steps.
(1): the growth of large scale h-BN-encapsulated silicene sheets on zirconium diboride thin film grown on SOI substrates. This will require the implementation of a nitrogen plasma source and a silicon source.
(2): The exfoliation of h-BN-encapsulated silicene sheets in the inert environment of a glovebox through the scotch tape method or through the chemical etching of the oxide layer of the SOI substrate. After exfoliation, h-BN-encapsulated silicene sheets will be transfered to a selected substrate.
(3): Sucesfully patterning of ZrB2 thin films grown on SOI to permit the realization of h-BN-encapsulated silicene sheets with the same pattern, that can then be exfoliated and transfered.
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Report
(4 results)
Research Products
(20 results)
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[Journal Article] Formation of BN-covered silicene on ZrB2/Si(111) by adsorption of NO and thermal processes2020
Author(s)
J. Yoshinobu, K. Mukai, H. Ueda, S. Yoshimoto, S. Shimizu, T. Koitaya, H. Noritake, C.-C. Lee, T. Ozaki, A. Fleurence, R. Friedlein, and Y. Yamada-Takamura
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Journal Title
The Journal of Chemical Physics
Volume: 153
Issue: 6
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Journal Article] Time-resolved X-ray photoelectron diffraction using an angle-resolved time-of-flight electron analyzer2020
Author(s)
A. K. R. Ang, Y. Fukatsu, K. Kimura, Y. Yamamoto, T. Yonezawa, H. Nitta, A. Fleurence, S. Yamamoto, I. Matsuda, Y. Yamada-Takamura, and K. Hayashi
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Journal Title
Japanese Journal of Applied Physics
Volume: 49
Issue: 10
Pages: 100902-100902
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Journal Article] Emergence of nearly flat bands through a kagome lattice embedded in an epitaxial two-dimensional Ge layer with a bitriangular structure2020
Author(s)
A. Fleurence, C.-C. Lee, R. Friedlein, Y. Fukaya, S. Yoshimoto, K. Mukai, H. Yamane, N. Kosugi, J. Yoshinobu, T. Ozaki, and Y. Yamada-Takamura
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Journal Title
Physical Review B
Volume: 102
Issue: 20
DOI
Related Report
Peer Reviewed / Open Access / Int'l Joint Research
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