| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2012: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Outline of Final Research Achievements |
Plasma nitridation with RF grow discharge was found to be effective method to prepare a nitride layer on SiC surface. Small amount of hydrogen gas was added to the nitrogen gas to improve the activity of nitrogen radicals. The oxide phase was effectively removed in the surface nitridation layer by this method, but small amount of oxide was still detected in the nitride layer. Post deposition annealing in hydrogen atmosphere was effective to deduce the interface state density of SiO2/niteire/SiC MIS structure.
These results were useful not only for the gate of SiC MISFET but also for the surface passivation of all SiC devices, because of tis low interface state density.
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