| Project/Area Number |
25889041
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
KASAHARA Kenji 九州大学, システム情報科学研究科(研究院, 特任助教 (00706864)
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| Project Period (FY) |
2013-08-30 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | スピンMOSFET / ゲルマニウム / スピントロニクス / スピントランジスタ / ショットキー接合 |
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| Outline of Final Research Achievements |
Using the lateral spin-valve devices with the highly-ordered L21- Co2FeSi/n+-Ge Schottky tunnel contacts, we have realized the spin generation efficiency of ~0.12 which is about two orders magnitude larger than that for the previously reported devices with the Fe3Si/MgO tunnel barrier contacts, and succeeded that the spin-valve signals can be obtained at 275 K. We also have demonstrated that by using a (NH4)2S treatment on the Ge surface, a reduction in Fermi-level pinning can reproducibly be achieved at atomically matched bcc-alloy/Ge(111) interfaces. In addition, we have fabricated the Ge thin film transistors (TFTs) below 300 oC by using a modulated gold-induced-crystallization.
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