Development of Low Interface Resistance Structures Enabling the Realization of Si Spin MOSFETs

2023 Fiscal Year Final Research Report

• Project/Area Number: 21K14213
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: Nihon University
• Principal Investigator: ISHIKAWA Mizue 日本大学, 工学部, 専任講師 (60751865)
• Project Period (FY): 2021-04-01 – 2024-03-31
• Keywords: スピントロニクス / ホイスラー合金 / スピン伝導

Outline of Final Research Achievements

Si spin MOSFETs are anticipated as ultra-low power electronic devices that combine non-volatile memory and logic functions. The key technology for realizing Si spin MOSFETs is spin injection into silicon, which requires increasing the magnetoresistance (MR) ratio, a crucial metric for non-volatile memory. This study focuses on interface resistance and explores methods to enhance the MR ratio by increasing spin signal strength through low interface resistance structures. The study identified challenges in forming high-concentration impurity layers and ferromagnetic electrode layers. However, it successfully established conditions for fabricating fine-processed devices and spin signal measurement equipment necessary for evaluating the MR ratio. These findings are valuable not only for realizing Si spin MOSFETs by increasing the MR ratio but also for establishing foundational technologies for applying spintronics devices to semiconductor electronics.

Free Research Field

スピントロニクス

Academic Significance and Societal Importance of the Research Achievements

本研究は，これまでに着目されてこなかった界面抵抗構造がSiスピンMOSFETの実現に大きく作用する可能性について警鐘を鳴らしている．今回の研究成果は，低界面抵抗構造が実現できる方法を確立するための多くの知見を与えており，今後SiスピンMOSFETの実現のみならず，スピントロニクスデバイスの半導体エレクトロニクスへの応用に向けた基盤技術の確立にも寄与する，極めて有用な知見である．