2012 Fiscal Year Final Research Report
Mechanism of oxygen transportation in Czochralski Ge crystal growth from the melt covered by B_2O_3
| Project/Area Number |
22686002
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Shinshu University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
YONENAGA Ichiro 東北大学, 金属材料研究所, 教授 (20134041)
HOSHIKAWA Keigo 信州大学, 工学部, 客員教授 (10231573)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 結晶成長 / 結晶評価 |
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| Research Abstract |
Mechanism of oxygen transportation in Czochralski germanium (Ge) crystal growth from the melt covered by B_2O_3 was investigated. Ge crystals with high oxygen concentration up to were successfully grown from the melt fully covered by B_2O_3. In such growth, GeO_2 particles is decomposed by B_2O_3, however, few B and Si atoms were contaminated in the Ge melt and the grown crystal. Dissolution, evaporation and segregation of oxygen in the present growth were also discussed, finally, transportation of oxygen during the growth was clarified.
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