2014 Fiscal Year Final Research Report
Structures and band gaps of similar silicon oxide monolayers formed on a metal and a semiconductor
| Project/Area Number |
23540372
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | Fukuoka University (2013-2014)
Kyushu University (2011-2012) |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SHIRASAWA Tetsuroh 東京大学, 物性研究所, 助教 (80451889)
MIZUNO Seigi 九州大学, 総合理工学研究院, 教授 (60229705)
KOMORI Fumio 東京大学, 物性研究所, 教授 (60170388)
SUZUKI Takayuki 福岡大学, 工学部, 教授 (10580178)
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| Project Period (FY) |
2011-04-28 – 2015-03-31
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| Keywords | シリコン酸化物 / 超薄膜 / シリコンカーバイド / エピタキシャル単分子層 / 走査トンネル顕微鏡 / バンドギャップ |
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| Outline of Final Research Achievements |
The purpose of the present study is the comparison of the structure and band gap between similar epitaxial crystalline silicon oxide monolayers formed on SiC and Mo. First, their surfaces were observed by scanning tunneling microscopy (STM), but it was found that many nano-sized particles of SiO2 cover the silicon oxide monolayers entirely both the surfaces. We failed to remove the nano-particles from the Mo surface. However, the nano-particles formed on the SiC surface can be removed by heating the substrate at an adequate temperature. Clear atomic images of the silicon oxide monolayer can be observed on the SiC surface, and they support the previously proposed structure. The band gap of the silicon oxide monolayer could be determined by measuring point tunneling spectroscopy to be 5.5±0.5 eV, which is much smaller than that of bulk SiO2, 8.9 eV.
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| Free Research Field |
数物系科学
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